Hybrid imaging detector picture element structure for strengthening infrared permeability and preparation method of hybrid imaging detector picture element structure

An imaging detector and pixel structure technology, applied in the field of microelectronics, can solve the problems affecting imaging quality, large alignment deviation of infrared image parts and visible light image parts, etc., to achieve the effect of improving imaging quality

Active Publication Date: 2015-12-16
SHANGHAI INTEGRATED CIRCUIT RES & DEV CENT
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Problems solved by technology

[0003] However, in the existing hybrid imaging devices, lenses are used to form two optical paths to sense and image visible light and infrared light respectively, and finally a computer processing system is used...

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  • Hybrid imaging detector picture element structure for strengthening infrared permeability and preparation method of hybrid imaging detector picture element structure
  • Hybrid imaging detector picture element structure for strengthening infrared permeability and preparation method of hybrid imaging detector picture element structure

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[0046] In order to make the content of the present invention clearer and easier to understand, the content of the present invention will be further described below in conjunction with the accompanying drawings. Of course, the present invention is not limited to this specific embodiment, and general replacements known to those skilled in the art are also covered within the protection scope of the present invention.

[0047]The hybrid imaging detector pixel structure of the present invention includes: a wafer as a visible light filter layer; an infrared sensing area and a visible light sensing area respectively located on the upper and lower surfaces of the wafer; The output electrical signal is calculated and converted into an image conversion unit; among them, the visible light sensing area is located on the lower surface of the wafer, which includes the visible light sensing component and the extraction pole for outputting the electrical signal formed by the visible light sens...

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Abstract

The invention provides a hybrid imaging detector picture element structure for strengthening infrared permeability and a preparation method of the hybrid imaging detector picture element structure. A visible light induction area and an infrared induction area are integrated into a chip. Through forming an infrared anti-reflection material with a smooth convex surface on a wafer surface below an infrared induction component and above a visible light induction component, and filtering visible light by the wafer, the ratio of infrared light entering a micro-bridge structure can be improved, so that the imaging quality of the infrared induction component is improved; visible and infrared hybrid imaging micromation and chip become possible.

Description

technical field [0001] The invention relates to the technical field of microelectronics, in particular to a hybrid imaging detector pixel structure with enhanced infrared transparency and a preparation method thereof. Background technique [0002] With the development of industry and living standards, pure infrared imaging or pure visible light imaging can no longer meet the demand. Imaging technologies with wider wavelength bands have attracted more and more attention, especially imaging technologies that are sensitive to visible light and infrared light at the same time. [0003] However, in existing hybrid imaging devices, lenses are used to form two optical paths to sense and image visible light and infrared light respectively, and finally a computer processing system is used to synthesize them together. Due to the separation of the optical paths, the formed infrared image part and visible light image Some of them have large alignment deviations, which seriously affect t...

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Application Information

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IPC IPC(8): H01L27/146H01L31/09H01L31/0232B81B7/02H01L27/00
CPCH01L27/146H01L27/14625H01L27/14634H01L27/14683H01L31/09
Inventor 康晓旭
Owner SHANGHAI INTEGRATED CIRCUIT RES & DEV CENT
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