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Method and circuit for controlling a power semiconductor switch

A technology for controlling circuits and semiconductors, applied in electronic switches, electrical components, pulse technology, etc., can solve problems such as high heating, power semiconductor switch damage, and high power loss

Active Publication Date: 2019-12-10
INFINEON TECH AG
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The result is a very high power loss in the power semiconductor switch and a correspondingly high heating above the critical temperature, which leads to thermal runaway and thus destruction of the power semiconductor switch

Method used

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  • Method and circuit for controlling a power semiconductor switch
  • Method and circuit for controlling a power semiconductor switch
  • Method and circuit for controlling a power semiconductor switch

Examples

Experimental program
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Effect test

Embodiment Construction

[0018] exist figure 1 , the circuit diagram shows the power semiconductor switch T 1 and a control circuit 10 connected to the power semiconductor switch. In the example shown, IGBTs are shown as power semiconductor switches, however, as already mentioned at the outset, other transistor types (for example MOSFETs) can also be used as power semiconductor switches. according to figure 1 , IGBT T 1 is constructed as a low-side switch, i.e. IGBT T 1 is connected between the load and the reference potential terminal GND, which is at the reference potential (ground potential). The load utilizes R L to represent and is connected in the IGBT T 1 and supply voltage terminals (running at V B above). IGBT T 1 with load R L The connected first load terminal is called a collector terminal, and the second load terminal of the IGBT connected to the reference potential terminal GND is called an emitter terminal. In the case of MOSFETs, the load terminals are usually named drain and...

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PUM

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Abstract

A drive circuit for driving a semiconductor switch includes an overload detector circuit connected to the semiconductor switch and designed to detect an overload state of the semiconductor switch. The drive circuit further includes a driver circuit connected to a control terminal of the semiconductor switch and designed to generate, upon detection of an overload state, a driver signal having a level such that the semiconductor switch is switched off or switch-on is prevented. The driver circuit is further designed to generate a driver signal for driving the semiconductor switch according to a control signal, wherein for switching on the transistor at a first instant a driver signal is generated at a first level and, if no overload state is detected up to a predefined time period having elapsed, the level of the driver signal is increased to a second level.

Description

technical field [0001] The invention relates to a control circuit for a power semiconductor switch, such as an IGBT, and a corresponding control method. Background technique [0002] Power semiconductor switches such as IGBTs (Insulated Gate Bipolar Transistors) or MOSFETs are used today in a variety of applications, for example in converter circuits. Regardless of the specific application of the power semiconductor switch, a robust behavior in the event of a short circuit is generally desired. In the case of a short-circuited load, the switched-on power semiconductor switches are in short-circuit operation, ie in the case of a simultaneous high voltage drop (in the case of a converter, generally equal to the DC link voltage) on the load current path of the power semiconductor switches , high short-circuit currents flow through the power semiconductor switches. The result is a very high power loss in the power semiconductor switch and a correspondingly high heating above t...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H03K17/567
CPCH03K17/0828H03K17/14H03K17/567H03K17/687
Inventor C.耶格J.G.拉文
Owner INFINEON TECH AG