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Phase-change spinning nonvolatile storage unit

A non-volatile storage and phase change technology, applied in electrical components, circuits, semiconductor devices, etc., can solve the problems of asymmetric read and write performance, limited write times, write performance and power consumption disadvantages, and improve read and write performance. performance, reduced power consumption, ease of mass production, and the effect of commercial applications

Active Publication Date: 2016-02-03
TSINGHUA UNIV
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  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Although phase change memory can provide higher scalability than traditional DRAM, it has problems such as limited write times and asymmetric read and write performance.
Moreover, due to the relatively high delay and energy required to change the state of phase change memory, it is at a disadvantage in terms of write operation performance and power consumption.
Although magnetic memory has a high degree of integration, it has the problem of high read and write delays, and the materials of current magnetic memory are relatively complicated, resulting in high cost of current magnetic memory.

Method used

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Embodiment Construction

[0026] The phase change spin nonvolatile memory unit provided by the embodiment of the present invention will be further described below.

[0027] see figure 1 , the first embodiment of the present invention provides a phase-change spin non-volatile memory unit 10, the phase-change spin non-volatile memory unit 10 is a magnetic memory unit, including a magnetic pinned layer 102, a spacer layer 104, a magnetic free layer 106, a first electrode 108, and a second electrode 110, wherein the magnetic pinned layer 102, the spacer layer 104, and the magnetic free layer 106 are sequentially stacked, and the first electrode 108 is set on the surface of the magnetic pinned layer 102, so The second electrode 110 is disposed on the surface of the magnetic free layer 106, and the material of the spacer layer 104 is a phase change material.

[0028] The magnetic pinned layer 102 , the spacer layer 104 and the magnetic free layer 106 are sequentially stacked. Specifically, the spacer layer...

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Abstract

The invention provides a phase-change spinning nonvolatile storage unit, which comprises a magnetic fixing layer, a spacing layer, a magnetic free layer, a first electrode and a second electrode, wherein the magnetic fixing layer, the spacing layer and the magnetic free layer are overlapped and arranged sequentially; the first electrode is arranged on the magnetic fixing layer; the second electrode is arranged on the magnetic free layer; and the spacing layer is made of a phase-change material, or the magnetic fixing layer and the magnetic free layer are made of a dilution-type magnetic phase change material.

Description

technical field [0001] The invention relates to a phase change spin nonvolatile memory unit. Background technique [0002] Memory is one of the important components in the information industry. How to develop a new low-cost, high-density, fast-speed, and long-life non-volatile memory has always been an important direction of information industry research. [0003] Currently commonly used non-volatile memories include phase-change memories and magnetic memories. Phase change memory is a kind of non-magnetic memory, which uses the change of resistance between the amorphous state (high resistance state) and the crystalline state (low resistance state) of the phase change material for data storage during the storage process. Although phase change memory can provide higher scalability than traditional DRAM, it has problems such as limited write times and asymmetric read and write performance. Moreover, since the delay and energy required to change the state of the phase change ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L45/00H01L27/24
CPCH10B63/00H10N70/231
Inventor 李黄龙张子阳施路平
Owner TSINGHUA UNIV
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