Etching solution composition for copper layer and titanium layer and method of preparing array substrate for liquid crystal display using same

Abstract

The invention provides an etching solution composition for a copper layer and a titanium layer and a method of preparing an array substrate for a liquid crystal display using the same. The etching solution composition for etching the copper layer and the titanium layer comprises sulfate, chlorine compounds, nantokite, cyclammonium compounds and electron donor compounds, so that the copper layer and the titanium layer are uniformly etched in batches at a high etching speed, and simultaneously precipitates difficult to dissolve are prevented.

Description

technical field [0001] The present invention relates to an etching solution composition for a copper layer and a titanium layer and a method of manufacturing an array substrate for a liquid crystal display using the etching solution composition. Background technique [0002] A representative circuit for driving semiconductor devices and flat panel displays is a thin film transistor (TFT). A method for manufacturing a TFT-LCD generally includes forming a metal film of wiring material for a gate electrode and a source electrode / drain electrode on a substrate, forming a photoresist on a selected area of ​​the metal film, The metal film is then etched using the photoresist as a mask. [0003] Generally, a metal film in which aluminum or an alloy thereof and another metal are sequentially laminated has been used as a wiring material of a gate electrode and a source / drain electrode. Aluminum is cheaper, has low resistance, but has poor chemical resistance, and can cause troubles...

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Problems solved by technology

[0005] However, the above technique involves a problem that in order to etch a bimetallic film having a copper layer and a titanium layer, it is necessary to use two different etchant for etching the above two metal films

[0008] Furthermore, the disadvantages of persulfate-formulated etchants are, for example, low etch rates and instability over time

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