High-voltage semiconductor element

Abstract

The invention discloses a high-voltage semiconductor element, which comprises a P-type substrate, a high-voltage N-type well (HVNW), a first P-type well, a drift region (drift region) and a P-type doped layer, wherein the high-voltage N-type well is formed in the P-type substrate; the first P-type well is formed in the high-voltage N-type well; a first depth is formed between the bottom of the first P-type well and the surface of the P-type substrate; the drift region is formed in the high-voltage N-type well and extends downwards from the surface of the P-type substrate; the P-type doped layer is formed in the P-type substrate; a second depth is formed between the bottom of the P-type doped layer and the surface of the P-type substrate; the second depth is greater than the first depth; and the P-type doped layer is formed in a region below the first P-type well and the drift region.

Description

technical field [0001] The present invention relates to a high-voltage semiconductor device, and in particular to a high-voltage semiconductor device with high breakdown voltage and low resistance. Background technique [0002] In recent decades, the semiconductor industry has continued to shrink the size of semiconductor structures while simultaneously improving speed, performance, density, and unit cost of integrated circuits. For high-voltage or ultra-high-voltage semiconductor components (such as metal oxide semiconductor MOS), when the metal line is connected to the component in the silicon process, the problem of turning on the parasitic field element will be induced in some areas where the metal line crosses. . That is to say, under the high voltage operation of the MOS transistor, the maximum operating voltage of the MOS transistor may be lower than its breakdown voltage due to the influence and limitation of the threshold voltage (Vth) of the turned-on parasitic fi...

AI Technical Summary

Problems solved by technology

That is to say, under the high-voltage operation of the MOS transistor, the maximum operating voltage of the MOS transistor may be lower than its breakdown voltage due to the influence and limitation of the threshold voltage (Vth) of the parasitic field element being turned on.

[0003] However, the improvement of the breakdown voltage and the reduction of the on-resistance have always been two important characteristics that are difficult to achieve.

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