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Monitoring method for channel replacing process

A channel and process technology, applied in the monitoring field of channel replacement process, can solve problems such as difficulty in thickness measurement

Active Publication Date: 2016-02-24
INST OF MICROELECTRONICS CHINESE ACAD OF SCI
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Usually, it can be characterized by measuring the thickness of the replacement channel formed by epitaxy to determine whether the process requirements are met, but due to the irregular shape of the re-formed channel, it is also difficult to measure the thickness

Method used

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  • Monitoring method for channel replacing process
  • Monitoring method for channel replacing process
  • Monitoring method for channel replacing process

Examples

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Embodiment 1

[0033] The following will combine the process Figure 6 An embodiment of monitoring the quality of the substrate after epitaxially forming the replacement channel is described in detail.

[0034] Firstly, the quality target value and tolerance range of the substrate after epitaxially forming the replacement channel are provided.

[0035] In a common channel replacement process, firstly, fins 110 are formed on the substrate 100, and a dielectric material 120 is filled between the fins 110, refer to figure 1 shown; then, etching is performed to remove the fin 110, thereby forming an opening 130, referring to figure 2 shown; then, perform an epitaxial process to grow a replacement channel 140 in the opening, refer to image 3 shown.

[0036] In the embodiment of the present invention, the substrate, that is, the wafer, may be a Si substrate, SOI (Silicon On Insulator, Silicon On Insulator) or a substrate of other semiconductor materials. In this embodiment, the substrate is ...

Embodiment 2

[0048] The following will combine the process Figure 7 An embodiment of monitoring the quality difference before and after epitaxially forming a substitute channel is described in detail.

[0049] Provide the quality difference target value and its tolerance range before and after epitaxial formation of the replacement channel.

[0050] In a common channel replacement process, firstly, fins 110 are formed on the substrate 100, and a dielectric material 120 is filled between the fins 110, refer to figure 1 shown; then, etching is performed to remove the fin 110, thereby forming an opening 130, referring to figure 2 shown; then, perform an epitaxial process to grow a replacement channel 140 in the opening, refer to image 3 shown. This step is the same as that of Embodiment 1.

[0051] In this embodiment, after selecting a specific type of wafer as a sampling wafer, first obtain before carrying out epitaxy to form a replacement channel, such as figure 2 As shown, the first...

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Abstract

The invention provides a monitoring method for a channel replacing process. The monitoring method includes: providing a quality target value of a substrate and a tolerance range of the quality target value after replaced channels are formed by an epitaxial process; providing the substrate provided with fins, and removing the fins to form openings; forming the replaced channels in the openings by the epitaxial process; acquiring the quality of the substrate after the replaced channels are formed; and determining whether the quality is in the tolerance range of the quality target value or not. The monitoring method is intuitive and fast, has no damage to wafers, and is suitable for effective monitoring of the channel epitaxial process during mass production, in such a way that the channel epitaxial process can be effectively controlled.

Description

technical field [0001] The invention relates to the field of semiconductor manufacturing, in particular to a monitoring method for a channel replacement process. Background technique [0002] With the high integration of integrated circuits, the size of semiconductor devices continues to decrease, and the short-channel effect becomes more and more significant, which poses challenges to traditional device structures, and more and more new technologies are applied to semiconductor devices. [0003] At present, in order to solve the problem of short channel effect, a three-dimensional device structure of fin field effect transistor (Fin-FET) is proposed. Fin-FET is a transistor with a fin channel structure, which is one of the development directions of semiconductor technology. . It is foreseeable that the semiconductor technology node will be developed to 7nm, and on the basis of Fin-FET devices, replacing the traditional Si channel with a high-mobility material has become an...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/66
Inventor 杨涛王桂磊陈韬崔虎山卢一泓李俊峰赵超
Owner INST OF MICROELECTRONICS CHINESE ACAD OF SCI