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Preparation method of inorganic thin film comprising various precursors and device used in the method

A technology of inorganic thin film and preparation device, which is applied in the direction of metal material coating process, coating, gaseous chemical plating, etc., can solve the problems such as difficult to apply substrates, achieve small particle size, high product yield, and simplify equipment structure Effect

Active Publication Date: 2019-02-01
RES & BUSINESS FOUND SUNGKYUNKWAN UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

Therefore, these methods are difficult to apply to substrates such as plastic films

Method used

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  • Preparation method of inorganic thin film comprising various precursors and device used in the method
  • Preparation method of inorganic thin film comprising various precursors and device used in the method
  • Preparation method of inorganic thin film comprising various precursors and device used in the method

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Embodiment Construction

[0021] Hereinafter, the embodiments of the present disclosure will be described in detail so that those skilled in the art can easily realize the embodiments. However, it should be noted that the present disclosure is not limited to these embodiments and examples, but can be implemented in various other ways. In the drawings, parts not directly related to the description are omitted to enhance drawing clarity, and the same reference numerals denote the same parts throughout the document.

[0022] Throughout the documents of this disclosure, the term "connected to" or "coupled to" is used to indicate the connection or coupling of one element to another element, and includes cases where an element is "directly connected or coupled to" another element and where Both where an element is "electrically connected or coupled" to another element via a further element.

[0023] Throughout the documents of this disclosure, the term "on" used to indicate the position of one element relat...

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Abstract

The invention relates to a preparation method of an inorganic film containing multiple precursors and a device used therefor. The method comprises the steps of carrying out plasma treatment on a substrate by alternately using a source gas and a reactant gas, and allowing the source gas and the reactant gas to react on the surface of the substrate to form an inorganic film. The plasma treatment of the source gas and the reactant gas are carried out in independent plasma modules. The source gas includes an inert gas and precursors including metal selected from silicon, zirconium, titanium and groups formed thereby.

Description

[0001] Cross References to Related Applications [0002] This application claims priority under 35USC 119(a) to No. 10-2014-0100933 filed with the Korean Intellectual Property Office on Aug. 6, 2014, the entire contents of which are hereby incorporated by reference in their entirety. technical field [0003] The inventive disclosure described herein generally relates to methods and apparatus for the preparation of inorganic thin films comprising various precursors. Background technique [0004] Compound thin films are used in various ways as gate dielectric films or intermetallic barrier films for semiconductor devices, semiconductor integrated circuits, compound semiconductors, solar cells, liquid crystal displays (LCDs), organic light emitting diodes (OLEDs), etc., as protective films, And as a mask to prevent chemical reaction with surrounding materials, etc. Therefore, coating a uniform thin film with a highly stepped structure has drawn attention as an important techni...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C23C16/513C23C16/455
Inventor 徐祥准赵成珉刘址范郑昊均
Owner RES & BUSINESS FOUND SUNGKYUNKWAN UNIV