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High-density low-cost magnetic recording medium FeNi alloy and preparation method therefor

A magnetic recording medium, a low-cost technology, applied in the field of information storage, can solve the problems of late start of research and low alloy magnetite, and achieve the effect of reducing material cost and increasing saturation magnetization

Active Publication Date: 2016-03-02
CENT IRON & STEEL RES INST
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0004] At present, some people have begun to pay attention to and start work in this area, (such as: T.Shima, M.Okamura, S.Mitani, K.Takanashi, J.Magn.Magn.Mater., 31, (2007) 2213, M. Mizuguchi, S. Sekiya, and K. Takanashi, J. Appl. Phys. 107 (2010) 09A716, M. Mizuguchi, T. Kojima, M. Kotsugi, T. Koganezawa, K. Osaka, and K. Takanashi, J. Magn. Soc. Jpn., 35(2011) 370, M. Kotsugi, C. Mitsumata, H. Maruyam, T. Wakita, T. Taniuchi, K. Ono, M. Suzuki, N. Kawamura, N. Ishimatsu, M. Oshima , Y. Watanabe, and M. Taniguchi, Appl. Phys. Exp. 3 (2010) 013001, C. Mitsumata, Y. Kota, A. Sakuma, and M. Kotsugi, J. Magn. Soc. Jpn., 35 (2011) 52.) They tried to replace Pt with Ni to prepare a FeNi alloy with high order, but the experimental results only support the L1 0 In the presence of type FeNi alloy, the magnetocrystalline anisotropy parameter of the obtained alloy is Ku=6.3×10 6 erg / cc is not high; domestic research on this aspect started relatively late, and so far there are few breakthrough reports

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  • High-density low-cost magnetic recording medium FeNi alloy and preparation method therefor
  • High-density low-cost magnetic recording medium FeNi alloy and preparation method therefor
  • High-density low-cost magnetic recording medium FeNi alloy and preparation method therefor

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preparation example Construction

[0033] Provide a high-density low-cost magnetic recording medium alloy L1 0 -The preparation method of FeNi, comprises the steps:

[0034] (1) Prepare the seed layer: vacuumize the magnetron sputtering equipment to reduce the background pressure of the sputtering chamber to less than 1×10 -8 Torr, use argon as the working gas, keep the sputtering pressure at 4.0-9.0mTorr, open the baffle of the Fe target, deposit a layer of Fe film with a thickness of 1-2nm on the (001) MgO substrate, and close the Fe target material baffle;

[0035] (2) Prepare the buffer layer: Then, without changing the sputtering conditions, open the baffle of the Au target, continue to deposit the Au film on the Fe film, with a thickness between 40-50nm, and close the baffle of the Au target;

[0036] (3) Preparation of FeNi film: without changing the sputtering conditions, heat the substrate to between 400-450°C, open the baffles of the Fe target and the Ni target at the same time, and molecularly The F...

Embodiment 1

[0040] Embodiment 1-Fe (1nm) / Au (40nm) / FeNi (50nm) film

[0041] (1) Prepare the seed layer: use (001) single crystal MgO as the substrate, after careful cleaning, put it into the sputtering chamber, and vacuum the chamber to 2×10 -9 Torr, using argon as the working gas, keeping the sputtering pressure at 5mTorr, opening the baffle of the Fe target, depositing a layer of Fe film with a thickness of 1nm on the (001) MgO substrate, and closing the baffle of the Fe target;

[0042] (2) Prepare the buffer layer: then, without changing the sputtering conditions, open the Au target baffle, continue to deposit the Au film on the Fe film, with a thickness of 40nm, and close the Au target baffle;

[0043] (3) Preparation of FeNi film: without changing the sputtering conditions, heat the substrate to 400°C, open the baffles of the Fe target and the Ni target at the same time, and grow on the Au film by molecular beam epitaxy Deposit FeNi layer with a thickness of 50nm;

[0044] (4) An...

Embodiment 2

[0046] Embodiment 2-Fe (2nm) / Au (45nm) / FeNi (60nm)

[0047] (1) Prepare the seed layer: use (001) single crystal MgO as the substrate, after careful cleaning, put it into the sputtering chamber, and vacuum the chamber to 1×10 -9 Torr, using argon as the working gas, keeping the sputtering pressure at 6mTorr, opening the baffle of the Fe target, depositing a layer of Fe film with a thickness of 2nm on the (001) MgO substrate, and closing the baffle of the Fe target;

[0048] (2) Prepare the buffer layer: then, without changing the sputtering conditions, open the Au target baffle, continue to deposit the Au film on the Fe film, with a thickness of 45nm, and close the Au target baffle;

[0049] (3) Preparation of FeNi film: without changing the sputtering conditions, heat the substrate to 450°C, open the baffles of the Fe target and the Ni target at the same time, and grow on the Au film by molecular beam epitaxy Deposit FeNi layer with a thickness of 60nm;

[0050] (4) Anneali...

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Abstract

The invention belongs to the technical field of information storage, and relates to a high-density low-cost magnetic recording medium FeNi alloy and a preparation method therefor. The alloy is in a multilayer film structure, and is characterized in that an FeNi film takes (001) MgO as substrate, takes Fe as a seed layer, and takes Au as a buffering layer; a film with (001) orientation is grown and prepared in a mode of molecular beam epitaxy; the alloy has an L10 order structure, and meets the requirements of the application of a super-high density magnetic recording medium. According to the invention, the magnetocrystalline anisotropy parameter Ku can reach 2.3*10<7> erg / cc. The method reduces the material cost under the condition of obtaining high magnetocrystalline anisotropy parameters, and increases the saturation magnetization intensity of an alloy film.

Description

technical field [0001] The invention belongs to the technical field of information storage, and relates to a high-density and low-cost magnetic recording medium FeNi alloy and a preparation method thereof. Background technique [0002] The research on the performance and recording mechanism of information recording media has always been a hot issue in the field of basic and applied research. Magnetic recording materials are an important class of information storage materials. In the past 20 years, the development of magnetic recording technology and magnetic recording materials represented by computer hard disks has effectively promoted the process of social informatization. Using the vertical recording method, the areal density of the information storage unit has reached hundreds of GB / in 2 s level. 2.5in 2 The 500GB notebook hard disk has commercial products available. Although there are other high-density recording technologies participating in the competition, the u...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G11B5/851C23C14/18C23C14/35
CPCC23C14/18C23C14/352G11B5/851
Inventor 王东玲杜兆富
Owner CENT IRON & STEEL RES INST
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