Electrostatic chuck device and method for fixing wafer or tray

Abstract

The invention relates to an electrostatic chuck device and a wafer or tray fixing method. The electrostatic chuck device comprises an insulated body, a chuck body, a power supply, multiple first electrostatic adsorption electrodes and multiple second electrostatic adsorption electrodes, wherein the insulated body is arranged on the chuck body; the first electrostatic adsorption electrodes and the second electrostatic adsorption electrodes are buried inside the insulated body; the DC voltage output end of the power supply is electrically connected with the first electrostatic adsorption electrodes and the second electrostatic adsorption electrodes; and polarities of DC voltage loaded on the first electrostatic adsorption electrodes and the second electrostatic adsorption electrodes are opposite, and the first electrostatic adsorption electrodes and the second electrostatic adsorption electrodes are adjacent alternatively and are insulated electrically. The electrostatic chuck device of the invention can effectively fix a wafer, particularly a high-insulated dielectric wafer. The wafer or tray fixing method ensures reliable fixing of wafers or trays of various types, and a wafer jumping phenomenon does not happen.

Description

technical field [0001] The invention relates to the field of semiconductor equipment manufacturing, in particular to an electrostatic chuck device for plasma etching equipment and a method for fixing wafers or trays. Background technique [0002] In the prior art, in the semiconductor wafer processing industry, plasma etching equipment uses plasma to etch wafers, and the wafers or trays loaded with wafers are placed on chucks in the vacuum chamber of the equipment. In the process of plasma processing the wafer, in order to avoid the adverse effect of excessive temperature on the processing process, it is necessary to effectively manage the wafer temperature. Usually, the cooling liquid is continuously circulated in the cooling liquid channel in the chuck, and at the same time, heat medium gas such as helium is input through the gas channel of the chuck to blow the back of the wafer to stably control the wafer temperature in an appropriate range. [0003] In order to fix the...

AI Technical Summary

Problems solved by technology

[0003] In order to fix the wafer or tray while avoiding helium leakage, mechanical clamps, pressing units or adhesive plates are generally used to fix the wafer or tray on the chuck, but this method usually brings troubles such as processing, and the wafer can be processed The effective area is reduced, the cooling effect is deteriorated and other disadvantages. A common way to solve such problems is to use an ElectroStatic Chuck (ESC) to absorb and fix the wafer or tray.

[0015] But for wafers with high insulating dielectric materials, such as sapphire, SiO 2 wafer, etc., the wafer material is insulating due to figure 2 The electrode is a double electrode, which forms a small electric field. In the molecular structure of the dielectric, the binding force between the nucleus and the electron is sufficient to keep the electron in a bound state. Under the action of an external electric field, the positive and negative charges in the dielectric molecule Free charges cannot be formed without breaking away from the molecular structure. Without free moving charges inside, an induced charge layer cannot be formed, and electrostatic force cannot be generated. High-insulation dielectric wafers will be difficult to be adsorbed by electrostatic chucks

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