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Device Manufacturing Method

A device manufacturing method and device technology, which are applied in the field of device manufacturing and can solve problems such as difficulty in forming circuit patterns

Active Publication Date: 2018-05-08
NIKON CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

It is expected that even if conventional optical lithography is combined with the recently developed double patterning process (Double Patterning Process), it is expected that it will be difficult to form a circuit pattern finer than the 22nm node

Method used

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Examples

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Embodiment Construction

[0029] refer to figure 1 (A)~ Figure 12 (C) will describe an example of a preferred embodiment of the present invention. First, in this embodiment, an example of a pattern forming system used to form a circuit pattern of electronic devices (micro devices) such as semiconductor devices will be described.

[0030] figure 1 (A) represents the main part of the pattern forming system of this embodiment, figure 1 (B) means figure 1 The schematic structure of the scanning exposure apparatus (projection exposure apparatus) 100 which consists of a scanning stepper (scanner) in (A) is shown. exist figure 1 In (A), the pattern forming system includes: an exposure device 100, which exposes a wafer (semiconductor wafer) coated with a photosensitive material; a coating developer (coater / developer) 200, which coats the wafer A resist (resist) as a photosensitive material is developed; a thin film forming device 300; an etching device 400, which performs dry or wet etching on a wafer; ...

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Abstract

The mark forming method of the present invention has the following steps: exposing a mask image on the wafer, forming first and second resist marks having different shapes based on a part of the mask image; coating a polymer layer including a block copolymer on the wafer; forming a self-assembled region on the coated polymer layer; selectively removing a portion of the self-assembled region; and using first and second resists The reagent marks form first and second wafer marks on the wafer. A mark can be formed when a circuit pattern is formed using self-assembly of the block copolymer.

Description

technical field [0001] The present invention relates to a mark formation technology for forming a mark on a substrate, a mark detection technology for detecting a mark formed on a substrate, and a device manufacturing technology using the mark formation technology or mark detection technology. Background technique [0002] A semiconductor device typically includes a multilayer circuit pattern formed on a substrate. In the manufacturing process of the semiconductor device, in order to align these multilayer circuit patterns with each other accurately, a positioning mark is formed in a mark formation region of a predetermined layer of the substrate. Or alignment marks for alignment. In the case where the substrate is a semiconductor wafer (hereinafter simply referred to as wafer), the alignment marks are also referred to as wafer marks. [0003] Conventionally, the smallest circuit pattern of a semiconductor device is formed by a dry or liquid immersion photolithography proce...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L21/027G03F7/20
CPCH01L21/3086H01L2924/0002H01L2223/5442H01L2223/54426H01L2223/5446G03F7/0002G03F9/7046G03F9/708H01L23/544H01L2924/00G03F7/20H01L21/0274H01L21/67242H01L22/12
Inventor 芝裕二
Owner NIKON CORP