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Method for manufacturing Bi(AlxGa1-x)O3 film with components crossing morphotropic phase boundary

A quasi-isomorphic phase boundary and thin-film material technology, applied in chemical instruments and methods, gaseous chemical plating, crystal growth, etc., can solve problems affecting the use of PZT, environmental pollution, etc.

Active Publication Date: 2016-03-09
NANTONG UNIVERSITY
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, because PZT contains lead, it is easy to cause environmental pollution during its production and use. In the laws of many European and American countries, the use of lead-containing electronic components has been clearly stipulated, which has greatly affected PZT. use of
However, there is no mature Bi(Al x Ga 1-x )O 3 Material Preparation Technology

Method used

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  • Method for manufacturing Bi(AlxGa1-x)O3 film with components crossing morphotropic phase boundary
  • Method for manufacturing Bi(AlxGa1-x)O3 film with components crossing morphotropic phase boundary
  • Method for manufacturing Bi(AlxGa1-x)O3 film with components crossing morphotropic phase boundary

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0096] A) Fill the vacuum glove box with nitrogen with a purity of more than 99.9995%, and complete the following operations in the nitrogen atmosphere of the glove box: fill the organic bismuth source, organic aluminum source, and organic gallium source into the organic bismuth source container 1, organic The aluminum source container 2 and the organic gallium source container 3 are then installed and connected to their respective pipelines;

[0097] B) Tris(2,2,6,6-tetramethyl-3,5-heptanedionate) bismuth (III) is used as organic bismuth source, triethyl gallium is used as organic gallium source, and triethyl gallium is used as organic aluminum source Deionized water is used as the source of aluminum and oxygen precursors, and nitrogen with a purity of more than 99.9995% is used as the inert gas; the organic bismuth source, organic aluminum source, organic gallium source, oxygen precursor source, and nitrogen are respectively filled into the organic bismuth source container 1,...

Embodiment 2

[0133] Basic steps are the same as in Example 1. The differences are as follows:

[0134] The source of organic bismuth is triethylbismuth, the source of organic gallium is triethylgallium, the source of organic aluminum is triethylaluminum, the source of oxygen precursor is deionized water, and the inert gas is nitrogen with a purity of more than 99.9995%.

[0135] On the equipment controller, set the temperatures of organic bismuth source container 1, organic aluminum source container 2, organic gallium source container 3, and oxygen precursor source container 4 to 25°C, 20°C, 20°C, and 20°C, respectively;

[0136] On the input interface of the equipment controller, set the gas flow rate of the organic bismuth source carrier gas pipeline, the organic aluminum source carrier gas pipeline gas flow rate, the organic gallium source carrier gas pipeline gas flow rate, and the oxygen precursor carrier gas pipeline gas flow rate to 200 sccm (standard cubic centimetersperminute ), ...

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Abstract

The invention provides a method for manufacturing a Bi(AlxGa1-x)O3 film material with components gradually changed and crossing a morphotropic phase boundary. The film material is obtained through a self-restrictive surface adsorption reaction. In each growth period controlled by a program, two counters are arranged and used for setting and controlling the number of gas pulses of an organic aluminum source and the number of gas pulses of an organic gallium source in the growth period respectively; and in the successive growth process, the value of one counter is gradually increased, and the value of the other counter is gradually decreased. By the adoption of the method for manufacturing the Bi(AlxGa1-x)O3 film material, the Bi(AlxGa1-x)O3 film material with the components gradually changed and crossing the morphotropic phase boundary can be obtained, and the growth thickness of a Bi(AlxGa1-x)O3 film can be accurately controlled. Due to the fact that Bi(AlxGa1-x)O3 is a material free of lead, the Bi(AlxGa1-x)O3 becomes a potential substitute for Pb(Zr1-xTix)O3.

Description

technical field [0001] The present invention relates to a kind of preparation method of bismuth-based oxide film material, specifically a kind of Bi(Al x Ga 1-x )O 3 Preparation method of ferroelectric thin film material. Background technique [0002] There is a kind of separation in the phase diagram of some systems, and the boundary between two crystal configurations that are similar but belong to different symmetries is a quasi-isomorphic phase boundary. MPB is the quasi-homotype phase boundary: due to the different composition, on the temperature-composition phase diagram, as the composition changes, the phase will also change, so the boundary separating the two phases is called the quasi-homotype phase boundary. Near such phase boundaries, the phenomenon of phase transitions due to small changes in composition is of principled importance in materials science. Because this shows that near this phase boundary, the atoms that make up the crystal have great activity, an...

Claims

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Application Information

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IPC IPC(8): C23C16/40C23C16/52C30B25/16C30B29/22
CPCC23C16/40C23C16/409C23C16/45531C23C16/45544C23C16/52C30B25/16C30B29/22
Inventor 宋长青尹海宏王志亮张金中史敏
Owner NANTONG UNIVERSITY