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Method for preparing Bi (AlxGa1-x) O3 film through hybrid dissolving of organic sources

An organic source, organic aluminum technology, applied in chemical instruments and methods, gaseous chemical plating, crystal growth, etc., can solve problems affecting the use of PZT, environmental pollution, etc.

Active Publication Date: 2016-03-23
NANTONG UNIVERSITY
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, because PZT contains lead, it is easy to cause environmental pollution during its production and use. In the laws of many European and American countries, the use of lead-containing electronic components has been clearly stipulated, which has greatly affected PZT. use of
However, there is no mature Bi(Al x Ga 1-x )O 3 Material Preparation Technology

Method used

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  • Method for preparing Bi (AlxGa1-x) O3 film through hybrid dissolving of organic sources
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  • Method for preparing Bi (AlxGa1-x) O3 film through hybrid dissolving of organic sources

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Experimental program
Comparison scheme
Effect test

Embodiment 1

[0081] A) Fill the vacuum glove box with nitrogen with a purity of more than 99.9995%, and complete the following operations in the nitrogen atmosphere of the glove box: Weigh triethylaluminum and triethylgallium with a weight ratio of 1:10, dissolve them in xylene In, a solution with a concentration of 0.1M was obtained;

[0082] The three isomers of 45% to 70% m-xylene, 15% to 25% p-xylene and 10% to 15% ortho-xylene (the total ratio is 100% ) mixtures;

[0083] B) Bismuth tris(2,2,6,6-tetramethyl-3,5-heptanedionate) bismuth (III) is used as the organic bismuth source, deionized water is used as the oxygen precursor source, and the purity of the inert gas is more than 99.9995%. The nitrogen gas; the organic bismuth source, the organic aluminum gallium source obtained in step A), the oxygen precursor source, and the nitrogen gas are respectively filled into the organic bismuth source container 1, the organic aluminum gallium source container 2, the oxygen precursor source co...

Embodiment 2

[0117] A) Fill the vacuum glove box with argon with a purity of more than 99.9995%, and complete the following operations in the argon atmosphere of the glove box: Weigh triethylaluminum and triethylgallium with a weight ratio of 1:5, dissolve in In xylene, a solution with a concentration of 0.1M was obtained;

[0118] The three isomers of 45% to 70% m-xylene, 15% to 25% p-xylene and 10% to 15% ortho-xylene (the total ratio is 100% ) mixtures;

[0119] B) The organic bismuth source is triethylbismuth, the oxygen precursor source is deionized water, and the inert gas is nitrogen with a purity of 99.9995% or more; the organic bismuth source, the organic aluminum gallium source obtained in step A), the oxygen precursor source, Nitrogen gas is respectively filled into organic bismuth source container 1, organic aluminum gallium source container 2, oxygen precursor source container 3, and inert gas source container 4, and then installed and connected with respective pipelines;

...

Embodiment 3

[0152] A) Fill the vacuum glove box with argon gas with a purity of more than 99.9995%, and complete the following operations in the argon atmosphere of the glove box: Weigh triethylaluminum and triethylgallium with a weight ratio of 1:1, dissolve in In xylene, a solution with a concentration of 0.1M was obtained;

[0153] The three isomers of 45% to 70% m-xylene, 15% to 25% p-xylene and 10% to 15% ortho-xylene (the total ratio is 100% ) mixtures;

[0154] B) The organic bismuth source uses triethyl bismuth, and the oxygen precursor source uses O 2 , O 3 The mixed gas, the inert gas adopts nitrogen with a purity of 99.9995% or more; the organic bismuth source, the organic aluminum gallium source obtained in step A), the oxygen precursor source, and nitrogen are respectively filled into the organic bismuth source container 1 and the organic aluminum gallium source container 2. Oxygen precursor source container 3, inert gas source container 4, and then installed and connected...

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Abstract

The invention discloses a method for preparing a Bi (AlxGa1-x) O3 film material through the hybrid dissolving type self-limiting surface adsorption reaction of aluminum and gallium organic sources. The Bi (AlxGa1-x) O3 film material grows on a substrate material and is obtained through the precursor time division type self-limiting surface adsorption reaction, and the surface adsorption reaction particularly refers to an irreversible chemical adsorption reaction of a Langmuir adsorption mechanism. By the adoption of the method for preparing the Bi (AlxGa1-x) O3 film material, accurate control over the growing thickness of a Bi (AlxGa1-x) O3 film can be achieved, and the surface smoothness of the Bi (AlxGa1-x) O3 film is far superior to that in the prior art. Due to the fact that Bi (AlxGa1-x) O3 is a lead-free material, the Bi (AlxGa1-x) O3 becomes a potential substitute of Pb (Zr1-xTix) O3.

Description

technical field [0001] The present invention relates to a kind of preparation method of bismuth-based oxide film material, specifically a kind of Bi(Al x Ga 1-x )O 3 Preparation method of ferroelectric thin film material. Background technique [0002] Pb(Zr 1-x Ti x )O 3 (Lead zirconate titanate, abbreviated as PZT) is a ferroelectric material with excellent performance. PZT is PbZrO 3 and PbTiO 3 solid solution with a perovskite structure. PbTiO 3 and PbZrO 3 It is a typical representative of ferroelectrics and antiferroelectrics, because Zr and Ti belong to the same subgroup, PbTiO 3 and PbZrO 3 It has a similar space lattice form, but the macroscopic properties of the two are very different. Lead titanate is a ferroelectric, and its Curie temperature is 492 ° C, while lead zirconate is an antiferroelectric, and the Curie With a temperature of 232°C, such a large difference has attracted a lot of attention. Research on PbTiO 3 and PbZrO 3 It is found that P...

Claims

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Application Information

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IPC IPC(8): C23C16/52C23C16/40C30B25/02C30B25/16C30B29/22
CPCC23C16/40C23C16/45531C23C16/45544C23C16/45561C23C16/52C30B25/02C30B25/16C30B29/22
Inventor 尹海宏宋长青王志亮张金中史敏
Owner NANTONG UNIVERSITY