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Method for preparing bismuth aluminogallate thin films whose components cross the quasi-isotype phase boundary
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A quasi-isomorphic phase boundary and thin-film material technology, applied in chemical instruments and methods, gaseous chemical plating, crystal growth, etc., can solve problems affecting the use of PZT, environmental pollution, etc.
Active Publication Date: 2017-09-29
南通大学技术转移中心有限公司
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However, because PZT contains lead, it is easy to cause environmental pollution during its production and use. In the laws of many European and American countries, the use of lead-containing electronic components has been clearly stipulated, which has greatly affected PZT. use of
However, there is no mature Bi(Al x Ga 1-x )O 3 Material Preparation Technology
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Embodiment 1
[0096] A) Fill the vacuum glove box with nitrogen with a purity of more than 99.9995%, and complete the following operations in the nitrogenatmosphere of the glove box: fill the organic bismuth source, organic aluminum source, and organic gallium source into the organic bismuth source container 1, organic bismuth source respectively. The aluminum source container 2 and the organic gallium source container 3 are then installed and connected to their respective pipelines;
[0097] B) Tris(2,2,6,6-tetramethyl-3,5-heptanedione acid)bismuth(III) is used as the organic bismuth source, triethylgallium is used as the organic gallium source, and triethyl gallium is used as the organic aluminum source The aluminum and oxygen precursor sources are deionized water, and the inert gas is nitrogen with a purity of more than 99.9995%; the organic bismuth source, the organic aluminum source, the organic gallium source, the oxygen precursor source, and the nitrogen gas are respectively filled i...
Embodiment 2
[0133] The basic steps are the same as in Example 1. The differences are as follows:
[0134] The organic bismuth source is triethylbismuth, the organic gallium source is triethylgallium, the organic aluminum source is triethylaluminum, the oxygen precursor source is deionized water, and the inert gas is nitrogen with a purity of more than 99.9995%;
[0135] On the device controller, set the temperatures of the organic bismuth source container 1, the organic aluminum source container 2, the organic gallium source container 3, and the oxygen precursor source container 4 to be 25°C, 20°C, 20°C, and 20°C, respectively;
[0136] On the input interface of the device controller, set the gas flow rate of the organic bismuth source carrier gas pipeline, the organic aluminum source carrier gas pipeline gas flow rate, the organic gallium source carrier gas pipeline gas flow rate, and the oxygen precursor carrier gas pipeline gas flow rate to 200sccm (standard cubic centimeters per minu...
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Abstract
A method for preparing a Bi(AlxGa1-x)O3 thin film material with gradient composition and crossing the quasi-isotypephase boundary. The thin film material is obtained by self-limiting surface adsorption reaction. In each growth cycle controlled by the program, two counters are set to set and control the number of organoaluminum source gas pulses and organic gallium source gas pulses in each growth cycle, and one of the counters The value of the counter is gradually increased, and the value of the other counter is gradually decreased. By adopting the method for preparing Bi(AlxGa1-x)O3 thin-film material of the present invention, the Bi(AlxGa1-x)O3 thin-film material with composition gradient and crossing quasi-isotropic phase boundary can be realized, and Bi(AlxGa1-x)O3 thin-film growth Accurate and controllable thickness. Since Bi(AlxGa1‑x)O3 is a lead-free material, it is a potential replacement for Pb(Zr1‑xTix)O3.
Description
technical field [0001] The invention relates to a preparation method of a bismuth-based oxide thin film material, specifically a Bi(Al x Ga 1-x )O 3 Preparation method of ferroelectric thin film material. Background technique [0002] A quasi-homomorphic phase boundary exists between two crystal phases that have similar configurations but belong to different symmetries in phase diagrams of some systems. MPB stands for quasi-homomorphic phase boundary: due to the difference in composition, on the temperature-composition phase diagram, the phase will also change with the change of composition, so the boundary separating the two phases is called quasi-homomorphic phase boundary. In the vicinity of such phase boundaries, the phenomenon of phase transitions due to small changes in composition is of principled importance in materials science. Because this shows that the atoms constituting the crystal have great activity near the phase boundary, and this strong atomic activity ...
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