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Precursor time-separated preparation method of bismuth gallate thin film
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A time-separated, precursor technology, applied in chemical instruments and methods, crystal growth, from chemically reactive gases, etc., can solve the problems of difficult integration and compatibility of semiconductor manufacturing processes
Active Publication Date: 2017-09-22
南通大学技术转移中心有限公司
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However, the chemical solution spin-coating method is really powerless in the preparation of large-area high-thickness uniformity and precise controllability at the nanometer level, and it is difficult to integrate and be compatible with semiconductor manufacturing processes.
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Embodiment 1
[0085] A) dry the cleaned substrate material with an inert gas, and place it in a substrate tray;
[0086] B) The tray and the substrate are moved into the vacuum reaction chamber, the vacuum pump is turned on through the equipment controller, and then the automatic valve AK4 at the air inlet of the vacuum pump is opened to vacuumize the vacuum reaction chamber;
[0087] C) Bismuth precursor source 1, gallium precursor source 2, oxygen precursor source 3, and inert gas 4 are tris(2,2,6,6-tetramethyl-3,5-heptanedionate) bismuth ( III), tri-tert-butylgallium, H 2 O, N with a purity of more than 99.9995% 2 (nitrogen);
[0088] Set the temperatures of bismuth precursor source 1, gallium precursor source 2, and oxygen precursor source 3 to 180°C, 25°C, and 15°C respectively on the device controller, and the device controller controls bismuth precursor source 1, gallium precursor source The electric heater of the container of body source 2, oxygen precursor source 3 and / or the op...
Embodiment 2
[0116] A) dry the cleaned substrate material with an inert gas, and place it in a substrate tray;
[0117] B) The tray and the substrate are moved into the vacuum reaction chamber, the vacuum pump is turned on through the equipment controller, and then the automatic valve AK4 at the air inlet of the vacuum pump is opened to vacuumize the vacuum reaction chamber;
[0118] C) Bismuth precursor source 1, gallium precursor source 2, oxygen precursor source 3, and inert gas 4 are trimethylbismuth, trimethylgallium, H 2 O, N with a purity of more than 99.9995% 2 (nitrogen);
[0119] Set the temperature of bismuth precursor source 1, gallium precursor source 2, and oxygen precursor source 3 on the equipment controller to 25°C, 25°C, and 15°C respectively, and the equipment controller controls the temperature of bismuth precursor source 1, gallium precursor source The electric heater of the container of body source 2, oxygen precursor source 3 and / or the operating state of semicondu...
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Abstract
The invention provides a method for manufacturing a BiGaO3 film in a precursor time division manner. According to the method for manufacturing a BiGaO3 film material in the precursor time division manner through a self-restrictive surface adsorption reaction, the BiGaO3 film material grows on a substrate material, the space group of the BiGaO3 film material is Pcca, the lattice constant a is equal to 5.626 A, b is equal to 5.081 A, and c is equal to 10.339 A, the BiGaO3 film material grows on a selected substrate, the obtained preferred orientation is (112), and the BiGaO3 film material is obtained in the precursor time division manner through the self-restrictive surface adsorption reaction, wherein the surface adsorption reaction particularly refers to an irreversible chemical adsorption reaction of a Langmuir adsorption mechanism. By the adoption of the method for manufacturing the BiGaO3 film, the growth thickness of the BiGaO3 film can be accurately controlled, and the surface flatness of the BiGaO3 film is greatly superior to that in the prior art.
Description
technical field [0001] The invention relates to a bismuth-based oxide film material, specifically a BiGaO 3 Ferroelectric thin film material and its preparation method. Background technique [0002] Recently, bismuth-based ferroelectric materials such as bismuth ferrite (BiFeO 3 ), bismuth titanate (Bi 4 Ti 3 o 12 ), bismuth aluminate (BiAlO 3 ) and other ferroelectric oxides with perovskite or pseudoperovskite structures have attracted much attention because of their low leakage, strong fatigue resistance, high dielectric constant, and environmental friendliness. In recent years, bismuth ferrite (BiFeO 3 ) and bismuth titanate (Bi 4 Ti 3 o 12 )’s design, preparation, physical and chemical properties and application in production and life have been generally recognized and understood. In 2005, Baettig et al. theoretically predicted bismuth gallate (BiGaO 3 ) also have excellent ferroelectric properties, but currently people are working on bismuth gallate (BiGaO 3 ...
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