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Method for preparing bismuth aluminate thin film by space separation of precursor

A space separation and precursor technology, applied in gaseous chemical plating, metal material coating process, coating, etc., can solve the problem that bulk materials cannot be used in the field of microelectronics, lack of preparation technology, and are not suitable for devices, integrated circuits, etc. question

Active Publication Date: 2017-09-22
南通大学技术转移中心有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

In recent years, bismuth ferrite (BiFeO 3 ) and bismuth titanate (Bi 4 Ti 3 o 12 ) design, preparation, physical and chemical properties and application in production and life have been generally recognized and understood. In 2005, Baettig et al. predicted bismuth aluminate (BiAlO 3 ) also have excellent ferroelectric properties, however, bismuth aluminate (BiAlO 3 ) material preparation technology is still extremely lacking, and only report adopts high temperature and high pressure solid-state reaction method (pressure is on the order of GPa, temperature is more than 1,000 degrees Celsius) to prepare bismuth aluminate (BiAlO 3 ), and such high temperature and high pressure production conditions are obviously not suitable for the production of devices and integrated circuits in the microelectronics industry, and its bulk materials cannot be applied to increasingly miniaturized and integrated The field of microelectronics, but the preparation process of bismuth aluminate film suitable for the field of microelectronics has not been reported yet

Method used

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  • Method for preparing bismuth aluminate thin film by space separation of precursor
  • Method for preparing bismuth aluminate thin film by space separation of precursor
  • Method for preparing bismuth aluminate thin film by space separation of precursor

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Experimental program
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Effect test

Embodiment 1

[0056] The used vacuum reaction chamber includes 32 separate spaces, which are respectively used to pass through tris(2,2,6,6-tetramethyl-3,5-heptanedionate) bismuth (III) steam, tri-tertiary Butyl aluminum vapor, H 2 O steam, N with a purity above 99.9995% 2 (Nitrogen); B, A, O, and N respectively represent bismuth precursor gas, aluminum precursor gas, oxygen precursor gas, and high-purity nitrogen gas, and the arrangement order of these separated spaces is as follows figure 2 shown.

[0057] Tris(2,2,6,6-tetramethyl-3,5-heptanedionate)bismuth(III) vapor was generated from a solid source vial, starting from tris(2,2,6,6-tetramethyl- Bismuth (III) 3,5-heptanedionate is heated at 170-195°C to produce bismuth (III) tris(2,2,6,6-tetramethyl-3,5-heptanedionate) steam;

[0058] h 2 O steam is generated by a liquid source bottle, and the raw material is at room temperature and properly cooled by a semiconductor refrigeration chip to avoid excessive vapor pressure;

[0059] T...

Embodiment 2

[0076] The vacuum reaction chamber used includes 32 separate spaces, which are used to feed trimethylbismuth vapor, trimethylaluminum vapor, H 2 O steam, N with a purity above 99.9995% 2 (Nitrogen); B, A, O, and N respectively represent bismuth precursor gas, aluminum precursor gas, oxygen precursor gas, and high-purity nitrogen gas, and the arrangement order of these separated spaces is as follows image 3 shown.

[0077] Trimethylbismuth vapor is generated from a liquid source bottle, and trimethylbismuth is diluted and dissolved with an organic solvent to generate trimethylbismuth vapor;

[0078] Trimethylaluminum vapor is generated from a liquid source bottle, and trimethylaluminum is diluted and dissolved with an organic solvent to generate trimethylaluminum vapor;

[0079] h 2 O steam is generated by a liquid source bottle, and the raw material is at room temperature and properly cooled by a semiconductor refrigeration chip to avoid excessive vapor pressure;

[0080]...

Embodiment 3

[0095] The used vacuum reaction chamber includes 32 separate spaces, which are respectively used to feed triphenylbismuth vapor, triethylaluminum vapor, H 2 O steam, N with a purity above 99.9995% 2 (Nitrogen); B, A, O, and N respectively represent bismuth precursor gas, aluminum precursor gas, oxygen precursor gas, and high-purity nitrogen gas, and the arrangement order of these separated spaces is as follows Figure 4 shown.

[0096] Triphenylbismuth vapor is generated from a liquid source bottle, and triphenylbismuth is diluted and dissolved with an organic solvent to generate triphenylbismuth vapor;

[0097] Triethylaluminum vapor is generated from a liquid source bottle, and triethylaluminum is diluted and dissolved with an organic solvent to generate triethylaluminum vapor;

[0098] h 2 O steam is generated by a liquid source bottle, and the raw material is at room temperature and properly cooled by a semiconductor refrigeration chip to avoid excessive vapor pressure;...

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Abstract

A method for preparing a BiAlO3 thin film material by space-separated self-limiting surface adsorption reaction of a precursor, the BiAlO3 thin film material is grown on a substrate material, the space group of the BiAlO3 thin film material is R3c, and the lattice constant is a=7.611 Å, c=7.942Å; obtained by the space-separated self-limiting surface adsorption reaction of the precursor, and the surface adsorption reaction specifically refers to the irreversible chemical adsorption reaction of the Langmuir adsorption mechanism. By adopting the method for preparing the BiAlO3 thin film material of the present invention, the precise and controllable growth thickness of the BiAlO3 thin film can be realized, and the surface smoothness of the BiAlO3 thin film is much better than that of the prior art. Since the feeding of various gases is continuous and the flow rate is constant, the thickness of the film only depends on the number of times the substrate turns, and the process becomes extremely simple and reliable.

Description

technical field [0001] The invention relates to a bismuth-based oxide film material, specifically a BiAlO 3 Ferroelectric thin film material and its preparation method. Background technique [0002] Recently, bismuth-based ferroelectric materials such as bismuth ferrite (BiFeO 3 ), bismuth titanate (Bi 4 Ti 3 o 12 ), bismuth aluminate (BiAlO 3 ) and other ferroelectric oxides with perovskite or pseudoperovskite structures have attracted much attention because of their low leakage, strong fatigue resistance, high dielectric constant, and environmental friendliness. In recent years, bismuth ferrite (BiFeO 3 ) and bismuth titanate (Bi 4 Ti 3 o 12 ) design, preparation, physical and chemical properties and application in production and life have been generally recognized and understood. In 2005, Baettig et al. predicted bismuth aluminate (BiAlO 3 ) also have excellent ferroelectric properties, however, bismuth aluminate (BiAlO 3 ) material preparation technology is st...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C23C16/40
Inventor 王志亮尹海宏宋长青张金中史敏
Owner 南通大学技术转移中心有限公司