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Precursor time-separated preparation method of bismuth aluminate thin film

A technology of time separation and precursors, applied in the direction of gaseous chemical plating, metal material coating process, coating, etc., can solve the problem that bulk materials cannot be applied to the field of microelectronics, are not suitable for devices, integrated circuits, and lack of preparation technology, etc. question

Active Publication Date: 2017-09-22
南通大学技术转移中心有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

In recent years, bismuth ferrite (BiFeO 3 ) and bismuth titanate (Bi 4 Ti 3 o 12 ) design, preparation, physical and chemical properties and application in production and life have been generally recognized and understood. In 2005, Baettig et al. predicted bismuth aluminate (BiAlO 3 ) also have excellent ferroelectric properties, however, bismuth aluminate (BiAlO 3 ) material preparation technology is still extremely lacking, and only report adopts high temperature and high pressure solid-state reaction method (pressure is on the order of GPa, temperature is more than 1,000 degrees Celsius) to prepare bismuth aluminate (BiAlO 3 ), and such high temperature and high pressure production conditions are obviously not suitable for the production of devices and integrated circuits in the microelectronics industry, and its bulk materials cannot be applied to increasingly miniaturized and integrated The field of microelectronics, but the preparation process of bismuth aluminate film suitable for the field of microelectronics has not been reported yet

Method used

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  • Precursor time-separated preparation method of bismuth aluminate thin film
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  • Precursor time-separated preparation method of bismuth aluminate thin film

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Effect test

Embodiment 1

[0078] A) dry the cleaned substrate material with an inert gas, and place it in a substrate tray;

[0079] B) The tray and the substrate are moved into the vacuum reaction chamber, the vacuum pump is turned on through the equipment controller, and then the automatic valve AK4 at the air inlet of the vacuum pump is opened to vacuumize the vacuum reaction chamber;

[0080] C) Bismuth precursor source 1, aluminum precursor source 2, oxygen precursor source 3, and inert gas 4 are tris(2,2,6,6-tetramethyl-3,5-heptanedionate) bismuth ( III), tri-tert-butylaluminum, H 2 O, N with a purity of more than 99.9995% 2 (nitrogen);

[0081] Set the temperatures of bismuth precursor source 1, aluminum precursor source 2, and oxygen precursor source 3 on the equipment controller to 180°C, 25°C, and 15°C respectively, and the equipment controller controls the temperature of bismuth precursor source 1, aluminum precursor source The electric heater of the container of body source 2, oxygen pre...

Embodiment 2

[0111] A) dry the cleaned substrate material with an inert gas, and place it in a substrate tray;

[0112] B) The tray and the substrate are moved into the vacuum reaction chamber, the vacuum pump is turned on through the equipment controller, and then the automatic valve AK4 at the air inlet of the vacuum pump is opened to vacuumize the vacuum reaction chamber;

[0113] C) Bismuth precursor source 1, aluminum precursor source 2, oxygen precursor source 3, and inert gas 4 are trimethylbismuth, trimethylaluminum, H 2 O, N with a purity of more than 99.9995% 2 (nitrogen);

[0114] Set the temperature of bismuth precursor source 1, aluminum precursor source 2, and oxygen precursor source 3 on the equipment controller to 25°C, 25°C, and 15°C respectively, and the equipment controller controls the temperature of bismuth precursor source 1, aluminum precursor source The electric heater of the container of body source 2, oxygen precursor source 3 and / or the working state of semicon...

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Abstract

A method for preparing a BiAlO3 thin film material by self-limiting surface adsorption reaction of a precursor time-separated type, the BiAlO3 thin film material is grown on a substrate material, the space group of the BiAlO3 thin film material is R3c, and the lattice constant is a=7.611 Å, c=7.942Å; obtained by the time-separated self-limiting surface adsorption reaction of the precursor, which specifically refers to the irreversible chemical adsorption reaction of the Langmuir adsorption mechanism. By adopting the method for preparing the BiAlO3 thin film material of the present invention, the precise and controllable growth thickness of the BiAlO3 thin film can be realized, and the surface smoothness of the BiAlO3 thin film is much better than that of the prior art.

Description

technical field [0001] The invention relates to a bismuth-based oxide film material, specifically a BiAlO 3 Ferroelectric thin film material and its preparation method. Background technique [0002] Recently, bismuth-based ferroelectric materials such as bismuth ferrite (BiFeO 3 ), bismuth titanate (Bi 4 Ti 3 o 12 ), bismuth aluminate (BiAlO 3 ) and other ferroelectric oxides with perovskite or pseudoperovskite structures have attracted much attention because of their low leakage, strong fatigue resistance, high dielectric constant, and environmental friendliness. In recent years, bismuth ferrite (BiFeO 3 ) and bismuth titanate (Bi 4 Ti 3 o 12 ) design, preparation, physical and chemical properties and application in production and life have been generally recognized and understood. In 2005, Baettig et al. predicted bismuth aluminate (BiAlO 3 ) also have excellent ferroelectric properties, however, bismuth aluminate (BiAlO 3 ) material preparation technology is st...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C23C16/30C23C16/52
CPCC23C16/403C23C16/407C23C16/52
Inventor 王志亮尹海宏宋长青张金中史敏
Owner 南通大学技术转移中心有限公司