Wafer-level preparation method of glass substrate integrating chip heat dissipation structure and passive devices

Abstract

The invention discloses a wafer-level preparation method of a glass substrate integrating a chip heat radiation structure and passive devices. The wafer-level preparation method comprises the following steps of dry-etching a silicon wafer to form a silicon mold wafer which internally comprises a groove array of each passive device; electroplating to embed metallic copper in each groove array at the interior of the silicon mold wafer so as to form each passive device; dry-etching the silicon mold wafer after being subjected to the electroplating process so as to form the chip heat radiation structure; performing anodic bonding for a glass wafer and the chip heat radiation structure in a vacuum; heating the bonded wafer to enable glass to flow backwards and fill with gaps among the passive devices; annealing and cooling to form a backflow wafer; completely grinding and polishing an all-glass substrate on the upper surface of the backflow wafer and an all-silicon-wafer substrate on the lower surface of the backflow wafer; and depositing a metal adhesive layer and electroplating a metal conductive layer to form the glass substrate which integrates a heat radiation function and the passive devices and is used as a three-dimensional glass adapter plate or a three-dimensional passive device. According to the wafer-level preparation method, as the way of firstly electroplating and then reflowing is adopted, the process difficulty is reduced, the prepared passive devices are excellent in performance, and the chip heat radiation structure is integrated.

Description

technical field [0001] The invention relates to the preparation technology of a substrate adapter plate in the field of micro-electromechanical system packaging technology, in particular to an adapter plate-type glass substrate structure with heat dissipation function and containing passive devices and a preparation method thereof. Background technique [0002] The traditional passive device manufacturing process uses surface processing technology to prepare passive devices such as inductors on the silicon surface. Usually, the performance of passive devices is closely related to the height. Increasing the height can reduce the skin effect and improve the performance of the device. performance. However, the surface processing technology limits the height of the device, so it is difficult to further increase the height of the device to improve the performance of the device simply through the surface processing technology. On this basis, in order to improve the performance, t...

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Problems solved by technology

Silicon is a semiconductor material with conductive properties. During the preparation process, leakage, parasitic capacitance, unnecessary signal coupling and other effects will inevitably occur, which will adversely affect the performance of the device and the integration of the system.

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