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Hall element and manufacturing method therefor

A Hall element and cap layer technology, applied in the field of magnetic sensors, can solve the problems of device surface damage and affect the reliability of Hall elements, so as to reduce damage, improve stability and reliability, and improve stability and reliability. Effect

Inactive Publication Date: 2016-03-16
SUZHOU JUZHEN PHOTOELECTRIC
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0004] For this reason, what the present invention seeks to solve is that the passivation method of the existing Hall element will produce damage to the surface of the device, thereby affecting the problem of the reliability of the Hall element, thereby providing a passivation effect that is good, and has little damage to the surface of the device. Hall element and preparation method thereof with little influence of damaged area on device performance

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  • Hall element and manufacturing method therefor
  • Hall element and manufacturing method therefor
  • Hall element and manufacturing method therefor

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Embodiment

[0023] This embodiment provides a Hall element, such as Figure 4 As shown, it includes a stacked GaAs substrate 1, an InGaP buffer layer 2, a GaAs Hall element functional layer 3, an InGaP cap layer 4, and an InGaP passivation layer 5; the InGaP passivation layer 5 and the InGaP cap layer 4 are opened There is a through hole exposing a part of the GaAs Hall element functional layer 3, and an electrode 6 is formed in the through hole.

[0024] The InGaP passivation layer 5 covers the sidewalls of the InGaP buffer layer 2, the GaAs Hall element functional layer 3 and the InGaP cap layer 4.

[0025] In this embodiment, the GaAs substrate 1 is preferably a semi-insulating GaAs substrate with a thickness of 625 μm.

[0026] The InGaP buffer layer 2 is an intrinsic semiconductor layer with a thickness of 0.5 μm.

[0027] The GaAs Hall element functional layer 3 is an N-type semiconductor layer. In this embodiment, it is preferably a GaAs layer doped with silicon, and the doping concentrati...

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Abstract

The invention discloses a Hall element. The Hall element comprises a semi-insulating GaAs substrate, an InGaP buffer layer, a GaAs Hall element function layer, an InGaP cap layer and an InGaP passivation layer which are arranged in a stacked manner, wherein the InGaP passivation layer further covers the side walls of the InGaP buffer layer, the GaAs Hall element function layer and the InGaP cap layer; through holes exposing a partial region of the GaAs Hall element function layer are formed in the InGaP passivation layer and the InGaP cap layer; and electrodes are formed in the through holes. Through the structural optimization, a two-dimensional electron gas structure is formed on each of the upper and lower surfaces of the GaAs Hall element function layer, and electrons are always transferred in the region, so that the influence of the defects of the side walls on electron transfer is reduced; and on the other hand, the InGaP cap layer and the InGaP passivation layer are arranged on the surface of the GaAs Hall element function layer, so that the damage of a process on the surface of the GaAs Hall element function layer is eliminated, the stability and reliability of the Hall element are greatly improved, and unbalanced voltage is reduced.

Description

technical field [0001] The invention relates to the technical field of magnetic sensors, in particular to a Hall element and a preparation method thereof. Background technique [0002] In order to improve the stability and reliability of the Hall element, it needs to be passivated during the preparation process. The traditional passivation process generally adopts PECVD method to grow SiO 2 or Si 3 N 4 for passivation. During the passivation process, the plasma will damage the surface of the material, resulting in defects in the damaged parts, which will lead to uneven electron transmission, resulting in an increase in unbalanced voltage. On the other hand, these defects will change with changes in external conditions such as temperature and electric field, seriously affecting the stability and reliability of the Hall element, which is not conducive to the long-term use of the Hall element. [0003] For the semiconductor abrupt heterojunction, due to the existence of th...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L43/06H01L43/04H01L43/14H10N52/00H10N52/01H10N52/80
CPCH10N52/80H10N52/00H10N52/101H10N52/01
Inventor 胡双元
Owner SUZHOU JUZHEN PHOTOELECTRIC