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Voltage control circuit, method, gate drive circuit and display device

A voltage control circuit and capacitor control technology, which is applied in the field of gate drive circuits, display devices, and voltage control circuits, can solve problems such as poor process compatibility and large reverse cut-off gate-source voltage, and achieve the goal of improving process compatibility. Effect

Active Publication Date: 2018-03-20
BOE TECH GRP CO LTD +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0003] The main purpose of the present invention is to provide a voltage control circuit, a method, a gate drive circuit and a display device, which solve the problem of poor process compatibility in the prior art when solving the problem of high-temperature abnormal display caused by a large reverse cut-off gate-source voltage The problem

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  • Voltage control circuit, method, gate drive circuit and display device
  • Voltage control circuit, method, gate drive circuit and display device
  • Voltage control circuit, method, gate drive circuit and display device

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no. 2 Embodiment

[0146] Compared with the second specific embodiment, the third specific embodiment of the voltage control circuit of the present invention has been further optimized, and its characteristic is to introduce the first control capacitor C1 and the second control capacitor C2 with equal capacitance values, and adopt CLK and CLKB replace Vdd, reducing a Vdd signal source and adding an implementation method; CLK is responsible for charging C1 and C2; the gate voltage of MF is controlled by C2.

[0147] When the third specific embodiment of the voltage control circuit of the present invention works, as Figure 13 as shown,

[0148] In the preparation period T0 of each display cycle, CLKB is at high level, CLK and CLK' are at low level, MC2 and MC3 are both off, and there is no loop formed between C1 and C2, so C1 and C2 are not charged, and MF is off. open;

[0149] In the output period T1 of each display cycle, CLK and CLK' are high level, CLKB is low level, MC2 and MC3 are both t...

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Abstract

A voltage control circuit and method, a gate driving circuit and a display device are provided. The voltage control circuit includes a gate-source voltage control unit (21), which is connected to the gate electrode of an output transistor (MO) and a pull-up node (PU) and configured to control the gate-source voltage of the output transistor (MO) to be less than a predetermined gate-source voltage by controlling the potential at the gate electrode of the output transistor (MO) when the potential at the pull-up node (PU) is at a low level in the output-off holding period of every display cycle. The predetermined gate-source voltage is less than or equal to 0. All the transistors included by the gate-source voltage control unit (21) are N-type transistors. In every display cycle, the output-off holding period is set to follow an output period. The voltage control circuit can solve the problem of abnormal display at high temperatures caused by a relatively higher reverse turning-off gate-source voltage and at the same time improves the process compatibility.

Description

technical field [0001] The invention relates to the field of display technology, in particular to a voltage control circuit, a method, a gate drive circuit and a display device. Background technique [0002] In the traditional GOA (Gate On Array, array substrate row drive) circuit design, in the output cut-off hold stage (that is, the stage after outputting a high-level gate drive signal), the gate potential of the output transistor is -8V. The potential of the gate drive signal output terminal is also -8V, so the gate-source voltage of the output transistor is 0V during the output cut-off and hold phase, and abnormal display will be poor due to a large leakage current in a high-temperature environment. Such as figure 1 As shown, the existing voltage control circuit uses a NAND gate 10 to control the gate-source voltage of the output transistor MO to be less than 0 during the output cut-off and hold phase, that is, to control the reverse control when the potential of the pu...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): G09G3/20
CPCG09G3/20G09G3/3266G09G3/3677G09G2310/0267G09G2310/0286G09G2310/08G11C19/28
Inventor 王俊伟
Owner BOE TECH GRP CO LTD
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