Method for preparing material on insulator by adsorption and exfoliation

Abstract

The invention provides a method for preparing a material on an insulator by adsorption and stripping, which includes the following steps: providing a substrate, on which a single crystal layer, a superlattice structure layer and a layer to be transferred are sequentially epitaxially doped; and then performing ion implantation, so that Implanting ions to a predetermined depth below the lower surface of the doped single crystal layer; providing a substrate with an insulating layer formed on the surface, bonding with the layer to be transferred to form a bonding sheet and performing annealing treatment so that the doped layer absorbs ions to form The microcracks are peeled off from the lower surface to obtain the material on insulator. The present invention uses doped layer adsorption, stripping and bonding to prepare materials on insulators, wherein the doped layer is formed by stacking a doped single crystal layer and a non-doped or low-doped superlattice structure layer; the superlattice structure The layer can enhance the ion adsorption capacity of the doped single crystal layer, so that the doped single crystal layer can also undergo adsorption and stripping at low doping concentrations, and the low doping concentration can reduce the probability of dopant ions diffusing into the layer to be transferred. Guarantee the quality of the layer to be transferred.

Description

technical field [0001] The invention belongs to the field of semiconductor manufacturing, and relates to a method for preparing a material on an insulator by adsorption and stripping. Background technique [0002] In recent years, materials on insulators have been widely used in many fields such as low-voltage, low-power, high-temperature, and radiation-resistant devices because of their unique insulating buried layer structure, which can reduce the parasitic capacitance and leakage current of the substrate. Making devices with smaller size and higher performance has always been the goal and direction of the development of the semiconductor industry. With the entry of VLSI technology into the 22nm node and below, higher requirements are placed on the feature size of integrated circuits. Based on ultra-thin Materials-on-insulator devices enable further device miniaturization. [0003] Usually, the preparation of materials on insulators includes the following technologies: 1....

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Problems solved by technology

[0006] In view of the shortcomings of the prior art described above, the purpose of the present invention is to provide a method for preparing materials on insulators by adsorption and stripping, which is used to solve the problem of high doping concentration of the doping layer in the prior art, and the easy diffusion of doping ions to the material to be transferred. The layer changes the properties of the layer to be transferred, and when the doped layer is a doped superlattice layer, the peeling surface is not smooth

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