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Semiconductor layer structure and preparation method thereof and thin-film transistor

A technology of thin film transistors and semiconductors, applied in the direction of transistors, semiconductor devices, electric solid devices, etc., can solve problems such as reducing electron mobility, achieve the effect of increasing charging speed, reducing resistance, and ensuring normal operation

Active Publication Date: 2016-03-23
WUHAN CHINA STAR OPTOELECTRONICS TECH CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The production process of thin film transistors is to form a traditional metal oxide semiconductor layer structure. The mobility of electrons in amorphous silicon is 0.5-1.0, and the mobility in polysilicon is 30-300. At the same time, process reasons will also reduce the migration of electrons. Rate

Method used

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  • Semiconductor layer structure and preparation method thereof and thin-film transistor
  • Semiconductor layer structure and preparation method thereof and thin-film transistor

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no. 1 approach

[0019] see figure 1 , the semiconductor layer structure 10 provided by the embodiment of the present invention is an essential part of a thin film transistor. The semiconductor layer structure 10 includes an insulating substrate 12 , a buffer layer 14 and a semiconductor layer 16 . The insulating substrate 12 can be a glass substrate. The buffer layer 14 and the semiconductor layer 16 are sequentially pasted on the insulating substrate 12, and the buffer layer 14 is located between the semiconductor layer 16 and the insulating substrate 12, in other words, the buffer layer 14 is pasted on both sides with The semiconductor layer 16 and the insulating substrate 12 .

[0020] see figure 2 , the semiconductor layer 16 includes a source signal access terminal 160 , a drain signal access terminal 161 , a first semiconductor layer pattern 162 , and a second semiconductor layer pattern 164 . The source signal access terminal 160 and the drain signal access terminal 161 are spaced...

no. 2 approach

[0024] Please also refer to figure 1 and figure 2 According to an embodiment of the present invention, a method for preparing a semiconductor layer structure includes the following steps:

[0025] An insulating substrate 12 is provided, which may be a glass substrate.

[0026] A buffer layer 14 is formed on the insulating substrate 12 .

[0027] A semiconductor layer 16 is formed on the buffer layer 14 . Specifically, the semiconductor layer 16 includes a source signal access terminal 160 , a drain signal access terminal 161 , a first semiconductor layer pattern 162 , and a second semiconductor layer pattern 164 . The source signal access terminal 160 and the drain signal access terminal 161 are spaced apart on the buffer layer 14 . Both the first semiconductor layer pattern 162 and the second semiconductor layer pattern 164 are “n” shaped and straddle between the source signal access terminal 160 and the drain signal access terminal 161 . Specifically, the first semicon...

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Abstract

The invention provides a semiconductor layer structure comprising an insulating substrate and a semiconductor layer which is arranged on the insulating substrate. The semiconductor layer comprises a source electrode signal access terminal, a drain electrode signal access terminal, a first semiconductor layer pattern and a second semiconductor layer pattern. The first semiconductor layer pattern and the second semiconductor layer pattern are arranged in parallel between the source electrode signal access terminal and the drain electrode signal access terminal. The invention also provides a thin-film transistor and a preparation method of the semiconductor layer structure.

Description

technical field [0001] The invention relates to the display field, and in particular to a semiconductor layer structure in a thin film transistor, a method for preparing the semiconductor layer structure, and a thin film transistor with the semiconductor layer. Background technique [0002] At present, thin film transistor liquid crystal display (ThinFilmTransistorLiquidCrystalDisplay, TFT-LCD) is developing in the direction of high pixels per inch (pixelperinch, ppi), and a major obstacle restricting the development of high ppi is the charging speed of thin film transistors. The production process of thin film transistors is to form a traditional metal oxide semiconductor layer structure. The mobility of electrons in amorphous silicon is 0.5-1.0, and the mobility in polysilicon is 30-300. At the same time, process reasons will also reduce the migration of electrons. Rate. Therefore, it is an urgent problem to design a semiconductor layer and a thin film transistor with red...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L29/786
CPCH01L29/78696G02F1/1368H01L27/1222H01L27/127H01L29/78603
Inventor 赵瑜张占东
Owner WUHAN CHINA STAR OPTOELECTRONICS TECH CO LTD
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