Power semiconductor module integrated with Hall current sensor

A power semiconductor and Hall current technology, applied in the field of power semiconductor modules, can solve the problems of large space occupied by current sensors, unfavorable system miniaturization, slow response speed, etc., to achieve beneficial protection, reduce subsequent use costs, and increase integration. Effect

Active Publication Date: 2016-03-23
YANGZHOU GUOYANG ELECTRONICS CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, installing the current sensor on the busbar takes up a lot of space, and sometimes it is even necessary to bend the busbar to match the installation of the current sensor. slower

Method used

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  • Power semiconductor module integrated with Hall current sensor
  • Power semiconductor module integrated with Hall current sensor
  • Power semiconductor module integrated with Hall current sensor

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Embodiment Construction

[0015] Such as figure 1 As shown, a power semiconductor module integrating a Hall current sensor includes an output electrode 1, a negative electrode 2, a positive electrode 3, a sampling control terminal 4, a bottom plate 5, a ceramic substrate 6, and a housing 7. The output electrode 1 is connected to An output electrode arm 8 arranged parallel to the direction of the bottom plate 5, the output electrode arm 8 is connected to the ceramic substrate 6, and a sensor core 9 is set on the output electrode arm 8, so that each phase of the AC output electrode 1 passes through a sensor core 9. The sensor magnetic core 9 has an upward facing magnetic core opening, the opening of the magnetic core is the insertion position of the subsequent Hall element 10 , and the pin of the Hall element 10 faces upward.

[0016] Such as image 3 As shown, in order to cooperate with the insertion of the Hall element 10 , the casing 7 is provided with an insertion hole 11 at a corresponding positio...

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Abstract

The invention discloses a power semiconductor module integrated with a Hall current sensor. The power semiconductor module comprises an output electrode, a sampling control terminal, a bottom plate, a ceramic substrate and a housing, wherein the output electrode is connected with an output electrode arm arranged in a direction parallel to the bottom plate; the output electrode arm is connected with the ceramic substrate and sleeved with a sensor magnetic core; the sensor magnetic core is provided with an upward magnetic core opening; a Hall component with an upward pin is inserted in the magnetic core opening; the housing is provided with an insertion hole in a corresponding position above the magnetic core opening; and the pin of the Hall component penetrates out of the insertion hole. According to the power semiconductor module, the current sensor is integrated in the power semiconductor module, so that the integration level, miniaturization level and stability of a control system are improved and the subsequent use cost is reduced.

Description

technical field [0001] The invention relates to the field of power electronics, in particular to a power semiconductor module integrating a Hall current sensor. Background technique [0002] The power module is a power switch module packaged by power electronic power devices such as metal oxide semiconductor (power MOS tube), insulated gate field effect transistor (IGBT), and fast recovery diode (FRD) according to certain functions. It is mainly used for Power conversion in various occasions such as electric vehicles, photovoltaic power generation, wind power generation, and industrial frequency conversion. The topological structure of the power semiconductor module is single-tube, two-unit, six-unit, etc., and can be combined into half-bridge, three-phase full-bridge and other circuit forms according to needs. In actual use, it is often necessary to obtain the output current value. [0003] A defect of the traditional power semiconductor module is that it does not have th...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L43/06
CPCH10N52/00H01L2924/19107H01L2224/48137H01L2224/48139H01L2224/49111
Inventor 王玉林滕鹤松
Owner YANGZHOU GUOYANG ELECTRONICS CO LTD
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