Manufacturing method of gate oxide layer and manufacturing method of semiconductor device

Abstract

The invention discloses a grid oxidation layer manufacturing method and a semiconductor device manufacturing method. Ozone-containing solution is used for processing a grid oxidation layer before photoetching, and oxygen ions in ozone can be bonded with silicon dangling bonds in the grid oxidation layer. In other words, the oxygen ions in ozone serve as filling atoms which are used for filling the silicon dangling bonds in the grid oxidation layer, thereby enabling the grid oxidation layer to be compact, preventing the inward diffusion of developing solution from causing the corrosion of a trench region of a semiconductor substrate under the grid oxidation layer in a photoetching process, and improving the reliability of a field effect transistor.

Description

technical field [0001] The invention relates to the technical field of semiconductors, in particular to a method for manufacturing a gate oxide layer and a method for manufacturing a semiconductor device. Background technique [0002] Field Effect Transistors (FETs) are one of the most widely used semiconductor devices in integrated circuits. A typical field effect transistor includes: a semiconductor substrate, source and drain regions, and a gate structure. The gate structure includes a gate oxide layer and a gate. The source and drain regions are located on both sides of the channel, and the gate oxide layer separates the gate from the channel. [0003] One reason field-effect transistors can operate in a variety of ways is because the gate oxide layer has different thicknesses and can withstand different voltages. [0004] In the prior art, in order to fabricate field effect transistors with gate oxide layers of different thicknesses on the same semiconductor substrat...

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Problems solved by technology

[0005] However, in the actual process, it is found that the performance of field effect transistors with gate oxide layers of different thicknesses fabricated by the above method is not reliable.

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