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a kind of sb 2 (se x ,s 1‑x ) 3 Alloy thin film and its preparation method

An alloy thin film, high deposition rate, low production cost and simple preparation process

Active Publication Date: 2017-06-16
HUAZHONG UNIV OF SCI & TECH
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0006] The invention provides a Sb 2 (Se x ,S 1-x ) 3 Alloy thin film, and provide its preparation method at the same time, solve existing Sb 2 Se 3 and Sb 2 S 3 The problem of fixing the bandgap width and energy band position of thin films, in order to realize the continuous adjustment of the bandgap width and energy band position, and obtain inorganic semiconductor materials with more suitable bandgap width and energy band position

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  • a kind of sb <sub>2</sub> (se <sub>x</sub> ,s <sub>1‑x</sub> ) <sub>3</sub> Alloy thin film and its preparation method
  • a kind of sb <sub>2</sub> (se <sub>x</sub> ,s <sub>1‑x</sub> ) <sub>3</sub> Alloy thin film and its preparation method
  • a kind of sb <sub>2</sub> (se <sub>x</sub> ,s <sub>1‑x</sub> ) <sub>3</sub> Alloy thin film and its preparation method

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Embodiment 1

[0047] Embodiment 1, including the step of preparing the evaporation source and the step of evaporatively depositing an alloy film:

[0048] (1) Preparation of evaporation source step: Sb 2 (Se y ,S 1-y ) 3 Alloy powder is used as the evaporation source, and the mole fraction of Se in the anion is 99.9%;

[0049] (2) Step of depositing alloy film: as figure 1 As shown, the substrate 9 and the evaporation source 10 are placed on the upper graphite plate 2 and the lower graphite plate 3 in a near-space sublimation device with a vacuum degree of 10 Pa, and the substrate and the evaporation source are heated respectively to form a Sb 2 (Se x ,S 1-x ) 3 Alloy thin film; it is naturally cooled to room temperature in a vacuum environment, and finally air is introduced to take out the substrate together with the alloy thin film;

[0050] The substrate is made of SnO 2 :F transparent conductive glass, the temperature of the substrate is 450°C, the heating rate is 10°C / s, the...

Embodiment 2

[0052] Embodiment 2, including the step of preparing the evaporation source and the step of evaporatively depositing an alloy film:

[0053] (1) Preparation of evaporation source step: Sb 2 (Se y ,S 1-y ) 3 Alloy powder is used as the evaporation source, and the mole fraction of Se in the anion is 90%;

[0054] (2) Step of depositing alloy film: as figure 1 As shown, the substrate 9 and the evaporation source 10 are placed on the upper graphite plate 2 and the lower graphite plate 3 in a close-space sublimation device with a vacuum degree of 2Pa, and the substrate and the evaporation source are heated respectively to form a Sb 2 (Se x ,S 1-x ) 3 Alloy thin film; it is naturally cooled to room temperature in a vacuum environment, and finally air is introduced to take out the substrate together with the alloy thin film;

[0055]The substrate is made of soda-lime glass coated with a Mo film on the surface, the temperature of the substrate is 25°C, the heating rate is 10...

Embodiment 3

[0057] Embodiment 3, including the step of preparing the evaporation source and the step of evaporatively depositing an alloy film:

[0058] (1) Preparation of evaporation source step: Sb 2 (Se y ,S 1-y ) 3 Alloy powder is used as the evaporation source, and the mole fraction of Se in the anion is 80%;

[0059] (2) Step of depositing alloy film: as figure 1 As shown, the substrate 9 and the evaporation source 10 are placed on the upper graphite plate 2 and the lower graphite plate 3 in a near-space sublimation device with a vacuum degree of 5 Pa, and the substrate and the evaporation source are heated respectively to form a Sb 2 (Se x ,S 1-x ) 3 Alloy thin film; it is naturally cooled to room temperature in a vacuum environment, and finally air is introduced to take out the substrate together with the alloy thin film;

[0060] The substrate is SnO coated with a CdS film 2 :F transparent conductive glass, the temperature of the substrate is 270°C, the heating rate is...

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Abstract

The invention relates to a Sb2 ( Sex, S1-x ) 3 alloy film and a preparation method thereof, and belongs to the field of preparation of semiconductor materials and devices. The problem of fixing of the width of a forbidden band and the position of an energy band of conventional Sb2Se3 and Sb2S3 films is solved, so that continuous adjustment of the width of the forbidden band and the position of the energy band is realized, and an inorganic semiconductor material of which the width of the forbidden band and the position of the energy band are proper is obtained. The Sb2 ( Sex, S1-x ) 3 alloy film disclosed by the invention is prepared by a near space sublimation method on a substrate by using Sb2 ( Sey, S1-y ) 3 alloy powder as an evaporation source or Sb2Se3 powder and Sb2S3 powder as the evaporation source, the chemical expression of the Sb2 ( Sex, S1-x ) 3 alloy film is Sb2 ( Sex, S1-x ) 3, and the thickness of the Sb2 ( Sex, S1-x ) 3 alloy film is smaller than or equal to be 3 [mu] m. The preparation method of the Sb2 ( Sex, S1-x ) 3 alloy film comprises the step of preparing the evaporation source and the step of evaporating and depositing the alloy film. The Sb2 ( Sex, S1-x ) 3 alloy film disclosed by the invention is simple in preparation technology, high in deposition rate and low in production cost; the prepared alloy film is uniform, compact and high in crystallinity; the width of the forbidden band of the Sb2 ( Sex, S1-x ) 3 alloy film is continuously adjustable between 1.20eV and 1.70eV, and the Sb2 ( Sex, S1-x ) 3 alloy film can be used for preparing optoelectronic devices including alloy film solar batteries, photo detectors and the like.

Description

technical field [0001] The invention belongs to the field of semiconductor materials and device preparation, in particular to a Sb 2 (Se x ,S 1-x ) 3 Alloy thin film and its preparation method. Background technique [0002] Antimony Selenide (Sb 2 Se 3 ) and antimony sulfide (Sb 2 S 3 ) belong to V-VI compound semiconductors, similar in structure and properties, with bandgap widths of about 1.20eV and 1.70eV respectively, both have good photoelectric response and pyroelectric effect, and can be used to prepare photodetectors and thermoelectric devices. Moreover, its abundant reserves and environmental friendliness make it an inorganic semiconductor material with broad application prospects. However, the international response to Sb 2 Se 3 thin film and Sb 2 S 3 The research and application of thin films are still in their infancy. [0003] In order to obtain inorganic semiconductor materials with more suitable bandgap width and energy band position, we have prep...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): B32B15/04C23C14/32C23C14/06
Inventor 唐江秦思凯刘新胜杨波
Owner HUAZHONG UNIV OF SCI & TECH