High thermal conductivity diamond/copper composite packaging material and preparation method thereof

A technology of packaging materials and composite materials, which is applied in the field of diamond/copper composite packaging materials and its preparation, can solve the problems of insufficient bonding strength and poor wettability, and achieve the effects of increasing density, low expansion coefficient, and improving bonding state

Active Publication Date: 2018-03-23
BEIJING INST OF NONFERROUS METALS & RARE EARTH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] Aiming at the problems of poor wettability and insufficient bonding strength between diamond and copper, the present invention provides a high-volume-fraction diamond-reinforced copper-based composite material with high thermal conductivity and a preparation method

Method used

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  • High thermal conductivity diamond/copper composite packaging material and preparation method thereof
  • High thermal conductivity diamond/copper composite packaging material and preparation method thereof

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Experimental program
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Effect test

Embodiment 1

[0034]The raw materials are oxygen-free copper with a purity greater than 99.99% and titanium with a purity greater than 99.99%, and the mass ratio is 99:1. Put the proportioned pure copper and pure titanium into the graphite crucible in the vacuum air atomization method, vacuumize, heat up and melt, keep warm at 1200°C for 10min, stir well, cast and spray powder to obtain Cu-(1wt.%)Ti Alloy powder. The particle sizes of 20 μm and 45 μm were screened out respectively, and mixed at a volume ratio of 4:1. The particle size of diamond was selected to be 100 μm, and the particle size of titanium powder was selected to be 20 μm. Diamond, titanium powder and Cu-(1wt.%)Ti alloy powder with volume percentages of 60%, 1%, and 39% were mixed and ball-milled for 120 minutes. Finally, put the mixed powder into a spark plasma sintering furnace for sintering to obtain a diamond / copper composite material. The sintering temperature is 950°C, the sintering pressure is 50MPa, the heating rate...

Embodiment 2

[0037] The raw materials are oxygen-free copper with a purity greater than 99.99% and titanium with a purity greater than 99.99%, and the mass ratio is 95:5. Put the proportioned pure copper and pure titanium into the graphite crucible in the vacuum air atomization method, vacuumize, heat up and melt, keep warm at 1200°C for 10min, stir well, cast and spray powder to obtain Cu-(5wt.%)Ti Alloy powder. The particle sizes of 20 μm and 45 μm were screened out respectively, and mixed at a volume ratio of 4:1. The particle size of diamond was selected to be 100 μm, and the particle size of titanium powder was selected to be 20 μm. Diamond, titanium powder, and Cu-(5wt.%)Ti alloy powder with volume percentages of 60%, 3%, and 37% were mixed and ball-milled for 120 minutes. Finally, put the mixed powder into a spark plasma sintering furnace for sintering to obtain a diamond / copper composite material. The sintering temperature is 850°C, the sintering pressure is 50MPa, the heating ra...

Embodiment 3

[0040] The raw materials are oxygen-free copper with a purity greater than 99.99% and titanium with a purity greater than 99.99%, and the mass ratio is 98:2. Put the proportioned pure copper and pure titanium into the graphite crucible in the vacuum air atomization method, vacuumize, heat up and melt, keep warm at 1200°C for 10min, stir well, cast and spray powder to obtain Cu-(2wt.%)Ti Alloy powder. The particle sizes of 20 μm and 45 μm were screened out respectively, and mixed at a volume ratio of 3.5:1. The particle size of diamond was 200 μm, and the particle size of titanium powder was 50 μm. Diamond, titanium powder and Cu-(2wt.%)Ti alloy powder with volume percentages of 50%, 1%, and 49% were mixed and ball-milled for 120 minutes. Finally, put the mixed powder into a spark plasma sintering furnace for sintering to obtain a diamond / copper composite material. The sintering temperature is 950°C, the sintering pressure is 40MPa, the heating rate is 150°C / min, the heat pre...

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Abstract

The invention discloses a diamond / copper composite packaging material high in thermal conductivity and a preparation method thereof. The material is formed by sintering Cu-(1-10 wt.%)Ti alloy powder, titanium powder and diamonds through the spark plasma sintering technology, wherein the content of Cu is 40-60% by weight, the content of Ti is 2-10% by weight and the rest is the diamonds. The composite packaging material is good in interface bonding performance and high in compactness, the heat conductivity of the material reaches 425-522 W / m.K, the thermal expansion coefficient of the material is lowered to (7.1-8.3)*10<-6> K, and the compactness is greater than 97%. The diamond / copper composite packaging material high in thermal conductivity and the preparation method thereof have the advantages that the operability is high and the process is simple and can be used for the field of electronic packaging.

Description

technical field [0001] The invention relates to a diamond / copper composite packaging material and a preparation method thereof, which are mainly used for heat dissipation substrates of ultra-large-scale integrated circuits and ultra-high-power light-emitting diodes, and belong to the technical field of metal-based composite materials. Background technique [0002] With the development of the electronics industry and the advancement of high-density packaging technology, the operating temperature of the circuit continues to rise, causing the traditional heat dissipation substrate to no longer meet its performance requirements. Therefore, it is of great theoretical significance and practical application value to study new materials for heat dissipation substrates with high thermal conductivity and low expansion coefficient. Since a single heat dissipation substrate material cannot simultaneously meet the thermal conductivity and expansion coefficient requirements of VLSI and hi...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C22C9/00C22C30/02C22C30/00C22C26/00C22C1/05C22C1/10H01L33/64
CPCC22C1/0425C22C1/05C22C1/10C22C9/00C22C26/00C22C30/00C22C30/02H01L33/641
Inventor 蔡正旭柳旭黄晓猛张国清郭菲菲张进超
Owner BEIJING INST OF NONFERROUS METALS & RARE EARTH
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