Spin logic device and electronic device including same

Abstract

The present invention relates to spin logic devices and electronic devices including the same. A spin logic device includes: a spin Hall effect SHE layer, which is made of a conductive material having a spin Hall effect, and is used to receive a first input current and a second input current along a first direction; a magnetic tunnel junction on the SHE layer, the magnetic tunnel junction having a free magnetic layer, a reference magnetic layer, and a barrier layer therebetween, wherein the free magnetic layer directly contacts the SHE layer; and in the a current wiring extending above the magnetic tunnel junction along a second direction intersecting the first direction and electrically connected to the magnetic tunnel junction, the current wiring being configured to receive a third input current for receiving a third input current in the A magnetic field is generated at the magnetic tunnel junction.

Description

technical field [0001] The present invention relates generally to spintronics, and more particularly, to a spin logic device and an electronic device including the spin logic device. Background technique [0002] Digital logic devices designed using the electron spin properties of magnetic materials are called spin logic devices or magnetic logic devices. Compared with ordinary semiconductor logic devices, this reconfigurable logic device based on spin-related transport characteristics has high operating frequency, unlimited reconfiguration times, non-volatile logic information, radiation protection, and magnetic random storage. Because of its advantages such as compatibility with memory (MRAM), it is considered to be a strong candidate for the next generation of logic devices to replace traditional semiconductor logic devices. [0003] figure 1 A prior art spin logic device 100 is shown, the core unit of which is a magnetic tunnel junction MTJ, which includes two ferromag...

AI Technical Summary

Problems solved by technology

First, it contains too much wiring, the structure is very complicated, and it is not easy to manufacture

Second, because it completely relies on the Oersted magnetic field generated by the current to flip the magnetization direction of the ferromagnetic layer, in order to generate a strong enough Oersted magnetic field to achieve the flip, a large current needs to be applied, thus resulting in energy consumption of the logic device very high

The above drawbacks limit the practical application of state-of-the-art spin logic devices

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