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Method and monocrystal furnace for preparing large-size monocrystal silicon rod through Czochralski method

A single crystal silicon rod, large size technology, applied in the direction of single crystal growth, single crystal growth, chemical instruments and methods, etc., can solve the problems of increased energy consumption, prolonged temperature search time, low growth rate, etc., to achieve the enhancement effect effect, reducing the probability of thermal imbalance, overcoming the effect of low growth rate

Inactive Publication Date: 2016-04-27
YINGLI GRP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

Therefore, its running time is also extended geometrically, especially in the equal-diameter growth stage, it will face problems such as low growth rate, prolonged time to find the temperature, and increased energy consumption.

Method used

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  • Method and monocrystal furnace for preparing large-size monocrystal silicon rod through Czochralski method
  • Method and monocrystal furnace for preparing large-size monocrystal silicon rod through Czochralski method
  • Method and monocrystal furnace for preparing large-size monocrystal silicon rod through Czochralski method

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Experimental program
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Embodiment 1

[0025] For the growth of N-type single crystal silicon rods, the process parameters in the equal-diameter growth stage vary with the growth of the single crystal length, see Table 1 for details.

[0026]

[0027]

Embodiment 2

[0029] For the growth of N-type single crystal silicon rods, the process parameters in the equal-diameter growth stage vary with the growth of the single crystal length, see Table 2 for details.

[0030]

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Abstract

The invention relates to the technical field of preparation of monocrystal silicon, especially relates to the technical field of large-size monocrystal growth by a molten liquid pulling method, and particularly discloses a method and monocrystal furnace for preparing a large-size monocrystal silicon rod through a Czochralski method; through optimization of a monocrystal furnace production process and an argon purging way, a monocrystal silicon growth interface can be controlled to remain good temperature gradient, the stability of a thermal field is improved, stable monocrystal quality is ensured while the monocrystal growth rate is improved, the productivity is increased, and energy consumption and production costs are reduced.

Description

technical field [0001] The invention relates to the technical field of single crystal silicon preparation, in particular to the technical field of large-size single crystal growth by a molten liquid pulling method. Background technique [0002] The production of silicon single crystal by the Czochralski method requires processes such as chemical material, seeding, shouldering, equal diameter, finishing, and cooling. In order to reduce production costs, large-size single crystal growth has become the mainstream, and the single-crystal furnace feed capacity has increased. , the size of the thermal field of the single crystal furnace increases. At present, the size of the graphite crucible of the single crystal thermal field for photovoltaics generally increases from 22 inches to 24 or 26 inches, which has reached the increase of the maximum feeding amount of a single furnace. Only after the increase of the single feeding amount The stable operation of the thermal field and the...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C30B15/00C30B29/06
CPCC30B15/00C30B29/06
Inventor 司佳勇周浩尚繁刘亚静
Owner YINGLI GRP