Method for forming semiconductor device

Abstract

The invention provides a semiconductor device formation method. The semiconductor device formation method comprises steps that, a semiconductor substrate is provided, the semiconductor substrate comprises an I / O device area, and the I / O device area comprises a first active area and a first isolation structure; the first isolation structure is etched, thickness of the first isolation structure is reduced, and a height difference of an upper surface of the first isolation structure and an upper surface of the first active area is reduced; and an I / O dielectric layer is formed on the first active area. Through the semiconductor device formation method, performance of semiconductor devices is improved.

Description

technical field [0001] The invention relates to the field of semiconductor manufacturing, in particular to a method for forming a semiconductor device. Background technique [0002] With the reduction of semiconductor process technology nodes, traditional silicon dioxide gate dielectric layer and polysilicon gate semiconductor devices (such as MOS devices) have problems such as increased leakage current and gate loss. [0003] Please refer to figure 1 , shows a semiconductor device with a conventional silicon dioxide gate dielectric layer and a polysilicon gate. The semiconductor device specifically includes an active region 110 and an isolation structure 120 between adjacent active regions. There is a gate 130 on the active region 110 , and the gate 130 covers the isolation structure 120 at the same time. Usually, there is a gate dielectric layer (not shown) between the active region 110 and the gate 130 , and the gate dielectric layer is also located between the gate 13...

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Problems solved by technology

[0007] However, if figure 2 As shown, the contact plug 260 connecting the gate 250 penetrates the gate 250 of the I / O device, and penetrates the high-k dielectric layer 240 and the I / O dielectric layer 230 until it directly contacts the isolation structure 220, thereby causing the gate Electrode 250 leakage current increases and breaks down the isolation of contact plug 260 from other structures

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