power semiconductor device
A technology of power semiconductors and conductor traces, which is applied in the direction of output power conversion devices, capacitor casings/packages, hybrid boxes/shells/packages, etc., and can solve mechanical failures, failures, and damage to power semiconductor devices of capacitor electrical connection components and other problems, to achieve the effect of reliable connection and reliable structure
Active Publication Date: 2019-03-26
SEMIKRON ELECTRONICS GMBH & CO KG
View PDF5 Cites 0 Cited by
- Summary
- Abstract
- Description
- Claims
- Application Information
AI Technical Summary
Problems solved by technology
Since power semiconductors are often exposed to mechanical shock and / or vibration loads, this can lead to mechanical failure of the electrical connection elements of the capacitor, which leads to damage and failure of the power semiconductors
Method used
the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View moreImage
Smart Image Click on the blue labels to locate them in the text.
Smart ImageViewing Examples
Examples
Experimental program
Comparison scheme
Effect test
Embodiment Construction
[0020] Figure 1 to Figure 3 Different views of a power semiconductor arrangement 1 according to the invention are shown.
[0021] The power semiconductor arrangement 1 according to the invention has a power semiconductor component 2 , a base body 3 and capacitors 6 arranged one behind the other in a first direction X, which are electrically conductively connected to the power semiconductor component 2 . The individual power semiconductor components 2 are preferably in the form of power semiconductor switches or diodes. The power semiconductor switch here is usually in the form of a transistor, for example an IGBT (Insulated Gate Bipolar Transistor, Insulated Gate Bipolar Transistor) or a MOSFET (MetalOxide Semiconductor Field Effect Transistor, Metal Oxide Semiconductor Field Effect Transistor) or in the form of a thyristor exist. Within the scope of the present exemplary embodiment, the power semiconductor component 2 is designed as a MOSFET. Note that in figure 1 and ...
the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More PUM
Login to View More Abstract
The invention relates to a power semiconductor device (1) comprising power semiconductor components (2), a base body (3) and capacitors (6) successively arranged along a first direction (X). The capacitors are conductively connected with the power semiconductor components. The power semiconductor device comprises a capacitor fastening device (7). The capacitor fastening device (7) comprises a first fastener (4) and a second fastener (5) both of which are of a one-piece construction structure. The first fastener comprises first frame elements (8) successively arranged along the first direction (X). The second fastener comprises second frame elements (9) successively arranged along the first direction (X). The first frame elements (8) and the second frame elements (9) are oppositely arranged and shield the capacitors from the side surfaces thereof so as to be in mechanical contact with the capacitors. The first fastener is connected with the second fastener via first and second snap-fit attachment (32). The first fastener and the second fastener are directly or indirectly connected with the base boby.
Description
technical field [0001] The invention relates to a power semiconductor device. Background technique [0002] In power semiconductor arrangements known from the prior art, power semiconductor components, such as power semiconductor switches and diodes, are usually arranged on a substrate and are connected to each other by means of conductor layers of the substrate, bonding wires and / or composite films Conductively connected. [0003] The power semiconductor components are often interconnected here to form one or more so-called half-bridge circuits, which are used, for example, to rectify and invert voltages and currents. In this case, the power semiconductor arrangement generally has capacitors electrically connected in parallel and / or electrically connected in series as energy stores, which usually buffer the DC voltage occurring across the power semiconductor arrangement. Such capacitors are often also referred to as intermediate circuit capacitors in the art. [0004] Th...
Claims
the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More Application Information
Patent Timeline
Login to View More Patent Type & Authority Patents(China)
IPC IPC(8): H01G2/04H01G2/10H01G4/38H01G9/08H01G4/40H05K7/02H02M1/00
CPCH01G2/04H01G2/106H01G4/38H01G4/40H01G9/08H02M1/00H05K7/02H01G9/14H01G9/26H01G11/10H01G11/82H02M7/003
Inventor 克里斯蒂安·沃尔特
Owner SEMIKRON ELECTRONICS GMBH & CO KG