TFT backplane and manufacturing method thereof
A backplane and directly above technology, which is applied in the field of TFT backplane and its manufacturing, can solve the problems of affecting the display effect, the decrease of the aperture ratio of the display device, and the large layout area, so as to achieve the effect of increasing the area and increasing the capacity
Active Publication Date: 2019-04-05
KUNSHAN GO VISIONOX OPTO ELECTRONICS CO LTD
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Problems solved by technology
In the current pixel circuit storage capacitor structure, the first metal layer and the second metal layer are respectively used as the two plates of the capacitor. Since the two plates of the capacitor have a planar structure, it is necessary to obtain a large capacitance. Large layout area, and the increase of the capacitance area will cause the decrease of the aperture ratio of the display device, which will affect the display effect
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[0022] In order to further illustrate the technical means and functions adopted by the present invention to achieve the intended purpose of the invention, the present invention will be described in detail below in conjunction with the accompanying drawings and preferred embodiments.
[0023] figure 1 Shown is a schematic cross-sectional view of the TFT backplane of the present invention. Such as figure 1 As shown, the TFT backplane of the present invention includes from bottom to top: a substrate 300, a silicon nitride layer 301 on the substrate 300, a silicon oxide layer 302 on the silicon nitride layer 301, and polysilicon on the silicon oxide layer 302 layer 303, a gate insulating layer 304 (GI layer, GateInsulation Layer) on the polysilicon layer 303, a first metal layer 305 on the gate insulating layer 304, a capacitor insulating layer 306 (CI layer) on the first metal layer 305 Layer, Capacitance Insulation Layer), the second metal layer 307 on the capacitor insulating...
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A TFT back plate is disclosed. The TFT back plate comprises a first metal layer, a capacitance insulation layer positioned on the first metal layer, and a second metal layer positioned on the capacitance insulation layer, wherein an insulating dielectric layer is formed on the second metal layer; a third metal layer is formed on the insulating dielectric layer; the third metal layer passes through gate via holes formed in the insulating dielectric layer and the capacitance insulation layer to be in contact with the first metal layer; and hollow-out parts for allowing the gate via holes to pass through are formed in the second metal layer. According to the TFT back plate, the first metal layer and the third metal layer are used as a polar plate for a storage capacitor while the second metal layer is used as the other polar plate for the storage capacitor; the storage capacitor is divided into three parts, so that the area of the storage capacitor can be effectively enlarged under a limited layout area; and the invention also provides a manufacturing method for the TFT back plate.
Description
technical field [0001] The invention relates to the field of display technology, in particular to a TFT backplane and a manufacturing method thereof. Background technique [0002] In the field of flat display, the pixel circuit storage capacitor structure of the TFT backplane generally includes a glass substrate, a polysilicon layer (p-Si layer) directly formed on the glass substrate, and a gate insulating layer (p-Si layer) directly formed on the glass substrate and the polysilicon layer. GI layer, Gate Insulation Layer), directly formed on the gate insulating layer and the first metal layer located above the polysilicon layer, directly formed on the gate insulating layer and the capacitance insulating layer on the first metal layer (CI layer, Capacitance InsulationLayer ), the second metal layer directly formed on the capacitor insulating layer and above the first metal layer, wherein the first metal layer serves as the gate of the driving TFT and also serves as a pole pla...
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IPC IPC(8): H01L27/12H01L23/64
Inventor 陈曦周茂清
Owner KUNSHAN GO VISIONOX OPTO ELECTRONICS CO LTD