Output circuit of static random access memory

Abstract

The invention discloses an output circuit of a static random access memory.The output circuit comprises a sense amplifier and a data latching circuit; the sense amplifier is composed of a first PMOS transistor, a second PMOS transistor, a third PMOS transistor, a fourth PMOS transistor, a fifth PMOS transistor, a sixth PMOS transistor, a seventh PMOS transistor, a first NMOS transistor, a second NMOS transistor, a third NMOS transistor, a fourth NMOS transistor and a fifth NMOS transistor, and the data latching circuit is composed of two NOR gates, an eighth PMOS transistor, a ninth PMOS transistor, a tenth PMOS transistor, an eleventh PMOS transistor, a sixth NMOS transistor, a seventh NMOS transistor, an eighth NMOS transistor, a ninth NMOS transistor and a tenth NMOS transistor.The output circuit has the advantages that the power consumption of all working periods keeps basically consistent when the static random access memory reads data, and the defense differential power analysis capacity of the static random access memory is improved.

Description

technical field [0001] The invention relates to an output circuit, in particular to an output circuit of a static random access memory. Background technique [0002] With the development of network technology and wireless communication technology, the security of personal information storage and transmission has received more and more attention. Electronic devices that store personal information usually ensure the security of information through encryption, but attackers can use side-channel attacks to obtain keys by using information such as power consumption, time, and electromagnetic waves leaked during hardware encryption. Differential power analysis is currently the most widely used and effective side-channel attack method. It obtains keys by analyzing the correlation between data processing and power consumption during hardware encryption, which seriously threatens the security of encryption devices. In recent years, scholars have found that eliminating the power cons...

AI Technical Summary

Problems solved by technology

[0007] In the read-in phase, the sense amplifier output nodes SAOUT and SAOUTB maintain a high level state, the data latch circuit maintains the original output data, and then opens the pull-down path in the evaluation phase, and the voltage difference between the bit line pair BL and BLB causes the NMOS transistor N3 Different from the pull-down current of the NMOS transistor N4, under the positive feedback of the two mutually coupled inverters of the sense amplifier, the voltage difference between the output nodes SAOUT and SAOUTB is quickly formed, but the wiring capacitance caused by process deviation and unbalanced wiring is inconsistent It will cause a certain difference in power consumption. At the same time, the data latch circuit determines whether the nodes node1 and node2 are flipped or held according to whether the data read in the current cycle is the same as the data read in the previous cycle, and the output terminal Q may be held, charged and Discharging three operations, causing the difference in power consumption associated with reading data

The supply current diagram of the output circuit in the existing SRAM under four different working states is as follows: Figure 5 shown, analysis Figure 5 It can be seen that the current difference in the evaluation stage is very obvious under different conditions, making the SRAM vulnerable to the threat of differential power analysis attack

[0008] For the existing SRAM, its output circuit is a single-ended output, because there is no completely consistent complementary output, so the dual-rail precharge logic is not suitable for use in the design of the SRAM, and the three-phase dual-rail precharge logic and The self-timed three-phase dual-rail precharge logic increases the discharge process on the basis of SABL, so that the main nodes in each cycle circuit can be charged and discharged once, and overcome the shortcomings of power consumption differences caused by inconsistent load and wiring capacitance, but due to their It is necessary to reset the output before the end of the cycle, and the read data cannot be maintained, so it is not suitable for designing SRAMs that defend against power consumption attacks

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