A red inorganic light-emitting diode display device and manufacturing method thereof
A technology for light-emitting diodes and display devices, which is applied to electric solid-state devices, semiconductor devices, electrical components, etc., and can solve the problem that red light cannot pass through opaque substrates.
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Embodiment 1
[0023] figure 1 A schematic diagram showing the structure of an inorganic light-emitting diode matrix display device driven by an active matrix. Wherein, the pixel light-emitting device includes: an etching stopper layer 1 , an N-type inorganic semiconductor layer 2 , a light-emitting inorganic semiconductor layer 3 , a P-type inorganic semiconductor layer 4 , a P-type electrode 5 , and an N-type electrode 6 . The pixel driving circuit device includes: a substrate 21 and a contact electrode 22 of the pixel driving device. It also includes: interconnection electrodes 23 .
Embodiment 2
[0025] Figure 2(1)-Figure 2(5) express figure 1 The specific manufacturing method of the active-driven red inorganic light-emitting diode matrix display device shown is as follows:
[0026] 1. Fabricate an etching barrier layer 1, an N-type inorganic semiconductor layer 2, a light-emitting inorganic semiconductor layer 3, and a P-type inorganic semiconductor layer 4 sequentially on the substrate 10 where the pixel light-emitting device is located, and then deposit, etch or lift off Photoresist (lift off) and other methods to form the P-type electrode 5 of the inorganic light emitting diode, see Figure 2 (1);
[0027] 2. The physical isolation between the light-emitting inorganic layers of different pixel light-emitting devices is formed by using gluing, exposure and etching methods, as shown in Figure 2 (2);
[0028] 3. Form the N-type electrode 6 through photolithography, deposition, and stripping processes, as shown in Figure 2 (3);
[0029] 4. On the pixel driving circu...
Embodiment 3
[0032] image 3 A schematic diagram showing the structure of an actively driven red inorganic light-emitting diode matrix display device. Wherein, the pixel light-emitting device includes: an etching stopper layer 1 , an N-type inorganic semiconductor layer 2 , a light-emitting inorganic semiconductor layer 3 , a P-type inorganic semiconductor layer 4 , a P-type electrode 5 , and an N-type electrode 6 . The pixel driving circuit device includes: a substrate 21 and a contact electrode 22 of the pixel driving device. It also includes: interconnection electrodes 23, polymers 24 for supporting between the interconnection electrodes and between the pixel driving circuit device and the pixel light emitting device.
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