17 results about "Diode matrix" patented technology

The invention relates to a method for manufacturing an optoelectronic device (1) comprising a diode matrix (D1, D2, D3) and a color conversion portion matrix (P1, P2), comprising the following steps: ∘ providing the diode matrix (D1, D2, D3), and top electrode layers (E1, E2, E3); ∘ depositing a dielectric layer (26) having a substantially zero surface potential; ∘ applying a potential difference between an electrode (2) and the first top electrode layers (E1), resulting in the formation of first motifs (M1) with a non-zero surface potential in the dielectric layer (26); ∘ producing the first color conversion portions (P1), by contacting the dielectric layer (26) with a colloidal solution (S1) containing first photoluminescent particles (p1).

The invention provides an FT32-based multimode fine-tuning keyboard circuit and a control method. In a hardware level, a domestic FT32 low-power-consumption processor is adopted, multiple communication interfaces and program debugging ports are integrated, and localization of core devices is realized; the input module fuses diode matrix keys, a rotary encoder and rocker multi-dimensional input, and takes into account pin resource optimization and operation diversity through time-sharing scanning and diode anti-collision design; a linear voltage regulator and a multiple protection circuit are introduced into the power supply module, so that the anti-interference capability is improved. On the software level, through dynamic priority distribution, self-adaptive protocol switching and low-power-consumption mode management, multi-signal efficient fusion, equipment seamless compatibility and energy consumption optimization are achieved. In addition, the state indication module drives an LED to display dynamically based on a shift register, multi-dimensional information feedback is achieved through single-line control, and user interaction intuition is remarkably improved.

The invention relates to a method for manufacturing a growth substrate suitable for the production by epitaxy of an InGaN-based diode matrix (D1, D2, D3), comprising the following steps: production of a crystalline stack (10) comprising, from a conductive buffer layer (11): a lower layer (12) based on doped GaN; then an intercalated separation layer (13) based on InGaN; then an upper layer (14) based on AlGaN; production of mesas of three categories M1, M2, M3, by localized etching of the crystalline stack (10); removal, by etching, of the upper portion (24) of at least the M3 mesas, the upper portion (24) of the M1 mesas being preserved; electrochemical non-photo-assisted porification of the lower portions (22) of mesas M1 and M3 only, the lower portion (22) of mesas M2 being non-porified. Figure for the abstract: Fig. 1H

The invention discloses a rapid quantitative detection method for saponins in Panax notoginseng, comprising: extracting a Panax notoginseng sample with methanol to obtain a methanol extract of the Panax notoginseng sample; and analyzing the methanol extract of the Panax notoginseng sample using an ultra-high performance liquid chromatography-diode array detector system; wherein the ultra-high performance liquid chromatography uses an ACQUITY UPLC@BEH-C18 chromatographic column (1.7um×2.1×50mm); the conditions of the ultra-high performance liquid chromatography are as follows: mobile phase A: methanol, mobile phase B: water; gradient elution: 0-5min, 20%A; 5-10min, 20%A-45%A; the acquisition wavelength of the diode array detector is 203nm. The rapid quantitative detection method for saponins in Panax notoginseng of the present invention has accurate and reliable detection results.

The invention relates to a method for manufacturing an optoelectronic device comprising a diode matrix (10) and photoluminescent pads arranged opposite at least one diode, comprising the following steps: ∘ producing an electret layer (E1) on the diode matrix (10), by localized polarization or depolarization, optically, so as to form surface potential patterns (M1); ∘ producing the photoluminescent pads (P1), by contacting the electret layer (E1) with a colloidal solution containing photoluminescent particles (p1), which are then deposited on the upper face (F1) of the electret layer (E1) opposite the predefined surface potential patterns (M1), thus forming the photoluminescent pads (P1).

The invention relates to an optoelectronic component (1), comprising a substrate (10) extending predominantly along a longitudinal plane (XY), a matrix of diodes (100a, 100b, 100c, 100d) arranged on the substrate (10), at least one first diode (100a) adjoining a trench (1000). The trench is defined by a side face (150a) of the first diode and separates the first diode from the second diode (100b). The first diode is configured to emit or receive light within a wavelength range of interest. The trench comprises: a dielectric layer (200) transparent over the wavelength range of interest, the dielectric layer having a side portion (200a) covering a side of the first diode; and a space (1500) in contact with the side portion to define an interface together with the side portion. The interface forms a reflective interface (250a) and forms a reflection angle of less than 89 DEG with the longitudinal plane.

The embodiment of the present application discloses an interlocking circuit, an electronic device and an interlocking system, wherein the interlocking circuit comprises: an interlocking input module, a control module, a diode matrix and an interlocking output module; the interlocking input module is used to output a first output signal through a first output end of the interlocking input module when an interlocking trigger signal is detected, and output a second output signal through a second output end of the interlocking input module; the diode matrix is ​​used to transmit the first output signal to the interlocking output module; the control module is used to output a control signal when receiving the second output signal; the interlocking output module is used to trigger interlocking when receiving the first output signal, or trigger interlocking when receiving the control signal. By adopting the present application, the extensibility of the interlocking circuit can be improved, the volume of the interlocking circuit can be reduced, the implementation cost can be reduced, and the applicability is strong.

The invention relates to a method for manufacturing an optoelectronic device with a matrix (20) of diodes (D), comprising the following steps: - producing an electret layer (30) having conversion zones (Zc) separated two by two by a spacing zone (Ze) with zero surface potential, where each conversion zone (Zc) is formed of a plurality of elementary zones called polarized (32) with non-zero surface potential spaced two by two by an elementary zone called non-polarized (33) with zero surface potential, so that the conversion zone (Zc) has a structured surface potential; - producing color conversion pads (P), by bringing the electret layer (30) into contact with a colloidal solution (S) containing photoluminescent particles (p). The invention also relates to the optoelectronic device resulting from said method.

An X-ray imaging detection module and a mounting fixture therefor and a mounting method therefor. The detection module comprises a circuit substrate (1), photodiodes (2), a scintillator (3) and metal wires (4) which are stacked sequentially. An X-ray is perpendicular to the detection module and is irradiated from one side of the metal wires (4). A plurality of photodiodes (2) are arranged in an array on the circuit substrate (1) to form a photodiode (2) matrix. The scintillator (3) completely covers all the photodiodes (2). A plurality of metal wires (4) are arranged in an array on the scintillator (3) to cover odd-numbered columns or even-numbered columns or odd-numbered rows or even-numbered rows of the photodiode (2) matrix. The photodiodes (2) form the photodiode (2) matrix on the circuit substrate (1), the scintillator (3) covers the photodiodes (2), and the metal wires (4) are arranged in the array on the scintillator (3) and filter out low-energy ray signals at positions covered by the metal wires (4), so that a high-and-low energy interleaved X-ray imaging detection module is formed, and a dual-energy image can be obtained, thereby improving the material discrimination capability of the image, and providing the advantages such as facilitating processing and manufacturing.

A write-once, read-many times (WORM) memory medium fabricated using 3D printing, additive manufacturing, or similar automated techniques is disclosed. The memory is structured as a diode matrix in which memory states are stored physically at intersections of address and data lines. These intersections are created using materials with differing electrical properties to produce fixed high or low states. The fabrication system may use arrays of ejection nozzles or other deposition mechanisms to enable practical write speeds. Applications include secure storage of cryptographic keys, hash values, and identity credentials. Additional embodiments include secure computing systems, secure communication devices, and hardware-based authentication mechanisms using the fabricated WORM memory as a tamper-resistant medium.

A light emitting diode driving circuit is electrically connected to a light emitting diode matrix. The light emitting diode matrix comprises a plurality of light strings. The light emitting diode driving circuit comprises a constant current source, a plurality of resistors, a detection circuit and a judgment circuit. The constant current source is used for controlling the driving current provided for the plurality of lamp strings to be constant current. The first ends of the plurality of resistors are electrically connected to the plurality of lamp strings respectively, and the second ends of the plurality of resistors are electrically connected to a reference potential. The judgment circuit is used for outputting a fault judgment signal according to the potential of the first ends of the plurality of resistors. The lamp string and the resistors form a plurality of current branches, and the detection circuit switches off or switches on the electrical paths from the input end of the judgment circuit to the current branches according to the voltage drop of the plurality of resistors, so as to detect whether the light emitting diodes in the plurality of current branches have faults or not, thereby simplifying the design of the circuit and improving the reliability of the circuit. And the operation efficiency of the circuit is improved.

The invention relates to a method for manufacturing an optoelectronic device comprising a diode array (10) and photoluminescent pads arranged opposite at least one diode, comprising the following steps: creating an electret layer (E1) on the diode array (10) by localized optical biasing or debiasing to form surface potential patterns (M1); creating the photoluminescent pads (P1) by contacting the electret layer (E1) with a colloidal solution containing photoluminescent particles (p1), which are then deposited on the upper surface (F1) of the electret layer (E1) opposite the predefined surface potential patterns (M1), thus forming the photoluminescent pads (P1). Abstract figure: Fig. 1D

The invention relates to a method for manufacturing an optoelectronic device (1) comprising a diode array (D1, D2, D3) and a color conversion portion array (P1, P2), comprising the following steps: providing the diode array (D1, D2, D3) and top electrode layers (E1, E2, E3); depositing a dielectric layer (26) having a substantially zero surface potential; applying a potential difference between an electrode (2) and the first top electrode layers (E1), resulting in the formation of first motifs (M1) with a non-zero surface potential in the dielectric layer (26); producing the first color conversion portions (P1) by contacting the dielectric layer (26) with a colloidal solution (S1) containing first photoluminescent particles (p1). Figure for the abstract: Fig. 1E

The invention relates to a method for manufacturing an optoelectronic device (1) with a diode matrix (20), comprising the following steps: producing an electret layer (30) having conversion zones (Zc) separated two by two by a spacing zone (Ze) with zero surface potential, where each conversion zone (Zc) is formed of a plurality of elementary zones called polarized (32) with non-zero surface potential spaced two by two by an elementary zone called non-polarized (33) with zero surface potential, so that the conversion zone (Zc) has a structured surface potential; producing color conversion pads (P), by bringing the electret layer (30) into contact with a colloidal solution (S) containing photoluminescent particles (p). Figure for the abstract: Fig. 4A

The invention discloses a light emitting diode (LED) matrix and a control method thereof. The matrix includes an LED array and an LED matrix control circuit. The control circuit includes: a driver corresponding to each LED; a voltage controller; a digital-to-analog converter (DAC); a microcontroller unit (MCU); and a current-to-voltage converter. The method is executed by the control circuit. The method includes: generating, by the MCU, a digital control signal indicative of a brightness level to be set in a given LED; generating, by the DAC, an analog control signal for the given LED based on the digital control signal; the voltage controller obtains the analog control signal and the feedback signal; generating, by the voltage controller, a composite control signal based on the analog control signal and the feedback signal; and adjusting, by the corresponding driver, a luminance level of the given LED.

A light emitting diode (LED) matrix and a method for controlling same. The matrix an array of LEDs and an LED matrix control circuit. The control circuit includes a driver corresponding to each LED; a voltage controller; a digital-to-analog converter (DAC); a microcontroller unit (MCU); and a current-to-voltage converter. The method is executed by the control circuit. The method includes generating, by the MCU, a digital control signal indicative of a brightness level to be set in a given LED; generating, by the DAC, an analogue control signal for the given LED based on the digital control signal; acquiring, by the voltage controller, the analogue control signal and a feedback signal; generating, by the voltage controller, a synthesized control signal based on the analogue control signal and the feedback signal; and adjusting, by the corresponding driver, a brightness level of the given LED.

The utility model discloses a shading type diaphragm photoelectric deviation rectifying sensor which comprises an outer box body, a photosensitive diode matrix, a passing roller and a light source. A passing roller is mounted in the outer box body, a photosensitive diode matrix is arranged in the passing roller, and a light source corresponding to the photosensitive diode matrix is arranged at the top of the inner side of the outer box body; and the diaphragm penetrates through the outer box body, penetrates through the space between the photosensitive diode matrix and the light source, and finally penetrates out of the outer box body. The photosensitive diode matrix is arranged in the transparent passing roller, the light source is arranged at the position, corresponding to the photosensitive diode, of the outer box body, the shading amount of the diaphragm is detected through cooperation of the photosensitive diode and the light source, and the change value of the corresponding voltage is output to the deviation correction executing mechanism of the diaphragm; by adopting the mode, the position offset distance of the diaphragm material can be accurately measured, the misjudgment risk caused by collapse of the edge of the diaphragm is avoided, the photoelectric sensor is not limited by the thickness of the diaphragm, and a basis is provided for application and production of the diaphragm with lower thickness.