Disclosed is a manufacturing method for a structure of a wafer level light emitting diode matrix. The method includes the following steps: step1, wherein an epitaxial wafer is taken; step2, wherein a light emitting diode unit module is manufactured on the epitaxial wafer to form a light emitting diode matrix, and the light emitting diode unit module comprises a plurality of light emitting diodes; step3, wherein fluorescent powder is coated on the light emitting diodes in the light emitting diode unit module, the light emitting diodes motivates the fluorescent powder to produce light with different wavelengths, so that output light and color of the light emitting diodes are adjusted; step4, wherein a substrate is taken; step5, wherein epitaxial wafers with light emitting diode matrixes are fixed on the substrate in sequence, and the epitaxial wafers are electrically connected with the substrate, so that the manufacture of the structure is finished. The method can be combined with a manufacturing technique of the light emitting diode and a packaging technique of a chip, a technical path is simplified, and technical cost is reduced. With the technique, the size and the space between the light emitting diodes can be accurately controlled.