The invention relates to a protector
chip of a
light emitting diode and production technology thereof. Through employing a narrow substrate base region width structure, bulk
voltage drop is decreased, switching speed is raised, and switching loss is reduced; a
diffusion method that gas carries a shallow N+ junction of liquid
phosphor source is employed, depth and
concentration gradient of a diffused junction are controlled well, stability of
breakdown voltage is increased with good elasticity, a device is conducted rapidly, and a role of protecting the
light emitting diode is played; evenness and homogeneity of the diffused junction are increased, and reliability and antisurge capability of a protection tube are raised; electrophoretic glass
passivation technology is employed, stability of trigger
voltage and
breakdown voltage of the protection tube is raised, the protection tube of the
light emitting diode has the characteristics of
fast switching speed, strong automatic
recovery capability of circuit power failure and low loss, when a light emitting
diode is in a open circuit state, conduction can be carried out rapidly, which does not cause collapse of a whole light emitting
diode matrix, a circuit can continue to work, and a reliable illumination function is provided for a
high frequency highlight brightness circuit.