A high-throughput wet chemical composite material chip preparation device and preparation method

Abstract

The invention relates to a high-throughput wet chemical combination material chip preparation device and preparation method, comprising a temperature control box, a support frame is arranged in the temperature control box, a waste liquid pool is arranged on the support frame, and the waste liquid pool is vertically above There is a reaction pool, the bottom of the reaction pool is provided with a liquid outlet at the bottom of the pool, a liquid discharge speed controller is provided at the bottom of the pool, a solution pool is provided vertically above the reaction pool, and a liquid addition is provided at the bottom of the solution pool. There is a liquid-feeding speed controller at the liquid-filling port, and a vertical lifter is set up vertically above the reaction tank, and the vertical lifter is fixedly connected with a fixture through a lifting line, and also includes a detection device. The invention can be used for the preparation of high-throughput combined material chips containing materials such as rare earth elements that are unstable in the atmosphere and whose oxides are not suitable for making targets; the temperature of the reaction process is relatively low, and the substrate can be further reduced by controlling the temperature of the reaction solution Temperature, prevent the substrate temperature from being too high during the preparation process to form intermediate compounds, and prevent further diffusion.

Description

technical field [0001] The invention relates to the technical field of composite material chips, in particular to a high-throughput wet chemical composite material chip preparation device and a preparation method. Background technique [0002] Since 2011, the United States and the European Union have respectively proposed the "Materials Genome" (MGI) program and the "Accelerated Metallurgy" (Accelerated Metallurgy, ACCMET) scientific program, aiming to accelerate the material research and development process by introducing high-throughput material research methods. The starting point of these projects is that since the 21st century, the speed of material research and development using the traditional "trial and error" method has been increasingly unable to keep up with the current rapidly developing industrial needs. In the process of high-throughput materials research, the most important part is the preparation of high-throughput materials. At present, among many high-thro...

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Problems solved by technology

At present, the general high-throughput combined material chip preparation methods are vacuum coating methods, such as magnetron sputtering, ion beam sputtering, pulsed laser deposition and other methods. The above methods have their own advantages and disadvantages, such as magnetron sputtering and ion beam deposition. Beam sputtering uses the method of plasma or ion beam, which has high energy and can be used for the preparation of most materials; pulsed laser deposition can also be used for the preparation of magnetic materials and high melting point materials; but for some rare earth elements due to simple substance Elements are easily polluted by water and oxygen in the air, and the equipment needs to be additionally equipped with a water-oxygen isolation device. At the same time, some oxide materials have a low degree of ceramicization and are not easy to make targets

At the same time, in the process of preparing composite chip materials by the high-throughput method, due to the high temperature and high energy of the preparation process, the multilayer film will crystallize and form an intermediate compound during the material deposition process, hindering the diffusion. Further progress, so that it is impossible to get the desired multi-component

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