Reinforcement method for single event latchup resistance of CMOS device

An anti-single particle and device technology, applied in the direction of single semiconductor device testing, semiconductor/solid-state device manufacturing, electrical components, etc., to achieve the effect of shortening the research and development cycle, strong resistance to neutron irradiation, and little impact on electrical characteristics

Active Publication Date: 2016-06-15
NORTHWEST INST OF NUCLEAR TECH
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  • Reinforcement method for single event latchup resistance of CMOS device
  • Reinforcement method for single event latchup resistance of CMOS device
  • Reinforcement method for single event latchup resistance of CMOS device

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[0036] The neutron pre-irradiation reinforcement scheme proposed by the present invention has a wider scope of application and is not only suitable for military-grade and aerospace-grade CMOS devices, but also for commercial CMOS devices. Many studies at home and abroad have verified the effect of neutron irradiation on the DC current gain of bipolar devices, but there is no method of applying neutron irradiation to device reinforcement in China, and neutron irradiation is only used in monopolar devices abroad. Particle effect research is not actually applied to device reinforcement. The present invention is based on the fact that the application requirements of commercial CMOS devices in small satellites are more and more urgent, and the anti-neutron radiation ability of modern CMOS devices can generally reach 110 15 n / cm 2Above, the present invention provides feasibility guarantee. In addition, the proposal of the present invention is aimed at the hardening treatment of co...

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Abstract

The invention discloses a reinforcement method for the single event latchup resistance of a CMOS device. Neutron irradiation is carried out on the CMOS device; a displacement damage is introduced in the neutron irradiation; and a current gain of a parasitical bipolar transistor in an inverter of the CMOS device is reduced, so that P-N-P-N latchup is not generated. The reinforcement method is an external reinforcement method; processing steps to produce the device will not be increased; there is no need to redesign a device layout for the single event latchup effect; and complexity of an original system will not be increased. Thus, the fixed size of the device will not be changed, and a peripheral circuit will not be increased either.

Description

technical field [0001] The invention relates to a method for reinforcing a CMOS device against single-event lockup, and is especially suitable for strengthening commercial CMOS devices against single-event lockup. technical background [0002] As an important research direction in the aerospace field, small satellites are of great significance to national defense construction. In order to reduce R&D costs, reduce quality and shorten the R&D cycle, the use of commercial CMOS devices in small satellites is a new development direction of aerospace technology. [0003] Commercial CMOS devices refer to off-the-shelf devices that can be directly purchased from the market, including two meanings: one means that the product level is commercial or industrial, to distinguish it from military and aerospace grades; the other is that the product is available from stock, No special customization is required. At present, developed countries impose export restrictions on military-grade an...

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Application Information

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IPC IPC(8): H01L21/263G01R31/26
CPCG01R31/26H01L21/263
Inventor 郭红霞潘霄宇罗尹虹丁李利张凤祁魏佳男赵雯王园明刘玉辉
Owner NORTHWEST INST OF NUCLEAR TECH
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