Method of forming semiconductor device

A semiconductor and device technology, which is applied in the field of semiconductor device formation, can solve the problems such as the electrical performance of semiconductor devices needs to be improved, achieve good electrical isolation performance, prevent the reduction of width and size, and reduce the effect of process difficulty
CN105719971BActive Publication Date: 2019-05-28SEMICON MFG INT (SHANGHAI) CORP
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Patent Information

Authority / Receiving Office
CN · China
Patent Type
Patents(China)
Current Assignee / Owner
SEMICON MFG INT (SHANGHAI) CORP
Publication Date
2019-05-28

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Abstract

The invention provides a formation method of a semiconductor device. The formation method of a semiconductor device comprises the steps: providing a substrate with isolation structures; forming a gate structure on the surface of part of the substrate between the adjacent isolation structures; forming a groove exposing the side wall of the isolation structure in the substrate at two sides of each gate structure; nitriding the side wall of the exposed isolation structure, and forming an anti-corrosion layer on the surface of the side wall of the isolation structure; after forming the anti-corrosion layer, cleaning the surface of the bottom and the side wall of the groove; and forming a stress layer filling the groove. The formation method of a semiconductor device can prevent cleaning from etching the isolation structure so as to enable the isolation structure to maintain good shape and provide good interface performance for forming the stress layer, and can enable the isolation structure to maintain good electrical isolation performance and can optimize the electrical properties for the formed semiconductor device.
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Description

technical field

[0001] The invention relates to the technology in the field of semiconductor manufacturing, in particular to a method for forming a semiconductor device. Background technique

[0002] With the continuous development of semiconductor technology, carrier mobility enhancement technology has been widely studied and applied. Improving the carrier mobility in the channel region can increase the driving current of MOS devices and improve the performance of the devices.

[0003] In the existing manufacturing process of semiconductor devices, since stress can change the energy gap and carrier mobility of silicon materials, it has become more and more common means to improve the performance of semiconductor devices through stress. Specifically, by properly controlling the stress, the mobility of carriers (electrons in NMOS devices, holes in PMOS devices) can be increased, thereby increasing the driving current, thereby greatly improving the performance of semiconductor...

Claims

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