Manufacturing method of shallow groove isolation structure

Abstract

The invention provides a manufacturing method of a shallow groove isolation structure, which is used for manufacturing the shallow groove isolation structure. A silicon-on-insulator orderly comprises a silicon substrate layer, an oxidation buried layer and a monocrystalline silicon top layer. The manufacturing method of the shallow groove isolation structure comprises the following steps of: depositing a layer of silicon dioxide and silicon nitride on the monocrystalline silicon top layer to serve as a hard screening layer, coating photoresist and exposing for development, etching the hard screening layer by means of dry etching, removing the residual photoresist, and exposing the position on the monocrystalline silicon top layer for manufacturing the shallow groove isolation structure; and performing oxygen ion implantation from upward side of the monocrystalline silicon top layer and annealing at high temperature to form a silicon dioxide isolation zone on the monocrystalline silicon top layer. The manufacturing method of the shallow groove isolation structure provided by the invention is not required to perform silicon dioxide deposition and chemical mechanical polishing to the shallow groove and can improve the component integration level so as to enhance the integration level, simplify the manufacturing flow and reduce the cost.

Description

technical field [0001] The invention relates to a manufacturing method, and in particular to a manufacturing method of shallow trench isolation. Background technique [0002] Shallow trench isolation technology (Shallow Trench Isolation) is a device isolation technology widely used in integrated circuits. Since the isolation structure prepared by the STI process itself has the advantage of occupying a relatively small area, it has gradually become the mainstream device isolation structure used in advanced manufacturing processes. [0003] Figure 1a~1e Shown is the current method for fabricating an STI structure on a device, and the steps of the fabrication method are as follows: [0004] (1) grow pad oxide layer 102 (for silicon oxide) on silicon substrate 101, then deposit hard mask layer 103 (for silicon nitride); ( Figure 1a ) [0005] (2) coating a photoresist 104 on the hard mask layer 103 and exposing and developing; ( Figure 1b ) [0006] (3) etch the device t...

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Problems solved by technology

[0010] However, in step (5) of the manufacturing method of the above-mentioned STI structure, limited by the step coverage capability of the filling equipment, the aspect ratio cannot exceed a certain limit, and the width of the shallow groove cannot be lower than a certain limit when its own depth is constant. A limit size, when the size of the device is decreasing day by day, the application range of this technology is gradually limited

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