DRAM

Abstract

The invention provides a dynamic random access memory, which includes a substrate, a buried word line and an active area, a bit line and a capacitor located in the substrate. The long side direction of the active area and the extension direction of the bit line present an acute angle θ, and the bit line is located on the substrate across the buried word line. Each buried word line divides the active area arranged in the same column into two contact areas, and each bit line is electrically connected to the adjacent contact areas on both sides of each buried word line. Capacitors are disposed between bit lines, and each capacitor is electrically connected to adjacent contact areas on both sides of each buried word line. Therefore, in each active area, one of the contact areas is electrically connected to a capacitor, and the other contact area is electrically connected to a bit line.

Description

technical field [0001] The present invention relates to a dynamic random access memory (Dynamic Random Access Memory, referred to as DRAM), and in particular to a dynamic random access memory capable of reducing the area of ​​components. Background technique [0002] In order to improve the integration level of DRAM, accelerate the operation speed of components, and meet consumers' demands for miniaturized electronic devices, a buried wordline DRAM (buried wordline DRAM) has been developed in recent years. meet the above-mentioned needs. [0003] For example, for reducing the area of ​​the device, there is currently an embedded word line DRAM designed by developing word lines, active regions and bit lines with different extending directions. [0004] However, the above-mentioned DRAM still has room for reduction, and the circuits with increasingly smaller pitches will also cause the problem of interference between components when operating the components. Contents of the ...

AI Technical Summary

Problems solved by technology

[0004] However, the above-mentioned DRAM still has room for reduction, and the lines with increasingly smaller pitches will also cause the problem of interference between components when operating components.

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