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The standard leakage of the size of the anode bonding technology of silicon and glass

An anodic bonding, standard leakage technology, applied in nanotechnology, microstructure technology, photolithography process of pattern surface, etc., can solve the problem of difficult to ensure the flow state of gas flow in the channel, difficult to achieve, poor controllability of leakage rate, etc. problems, to achieve the effect of small leak rate measurement, good controllability and wide leak rate range

Active Publication Date: 2017-12-26
合肥庐阳科技创新集团有限公司
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AI Technical Summary

Problems solved by technology

It is difficult to accurately control the size and number of leaks during the production process, and the controllability of the leak rate is poor, and it is difficult to obtain a standard leak with a predetermined leak rate; the range of leak rates is limited, and it is difficult to measure a smaller leak rate
[0006] To sum up, currently used standard leaks, such as metal flattened standard leaks and glass-platinum wire standard leaks, have poor controllability of the channel size and poor controllability of the leak rate during the manufacturing process, so the standard The leak rate of the leak hole must be calibrated by other equipment, so it is difficult to obtain a standard leak hole with a predetermined leak rate; the leak rate range is limited, and it is difficult to achieve a smaller leak rate measurement; the channel size is large, and it is difficult to guarantee The gas flow in the channel is in the state of molecular flow

Method used

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  • The standard leakage of the size of the anode bonding technology of silicon and glass
  • The standard leakage of the size of the anode bonding technology of silicon and glass
  • The standard leakage of the size of the anode bonding technology of silicon and glass

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Embodiment Construction

[0031] In this example, the method for making a size-controllable standard leakage hole by anodic bonding technology of silicon and glass is operated as follows:

[0032] 1. Wipe the surface of the silicon wafer with acetone and bake in an oven at 130°C for 30 minutes. After cooling, put it into an asher for oxygen plasma bombardment treatment. The vacuum degree during oxygen plasma treatment is 6-8Pa, and the bombardment time is 15min. The function of oxygen plasma bombardment is to increase the surface energy of silicon wafers. , Improve the adhesion strength of photoresist on the surface of silicon wafer. So far, the preprocessing of the silicon wafer is completed.

[0033] 2. Spin-coat a layer of AZ-701 photoresist on the surface of the silicon wafer, and the thickness of the photoresist is 180nm. After the silicon wafer was heated on a hot stage at 200°C for 30min, it was subjected to holographic exposure, and the exposure time was 140s. Bake and cure the exposed photo...

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Abstract

The invention discloses a method for preparing a standard leak with a controllable size by silicon and glass anode bonding technology. The method comprises the following steps: at first, coating a layer of photoresist on a pretreated silicon wafer, and obtaining a grating pattern on the silicon wafer by holographic exposure and ICP shallow etching technology; then, coating a layer of photoresist on the silicon wafer, and obtaining a deep groove structure on the silicon wafer by the wet corrosion technology; and taking another piece of pretreated Pyrex glass, carrying out an oxygen plasma bombardment treatment on the treated silicon wafer and the glass, bonding the silicon wafer with the glass at a certain pressure and temperature, and preparing the standard leak by the anode bonding technology. According to the method disclosed by the invention, the holographic exposure technology, the wet corrosion technology and the anode bonding technology are fused, the size of the prepared standard leak is controllable, the leakage rage is relatively wide, and since the size of a channel is at a nanometer level, a gas in the channel is still in a molecular flow state even if in the case of a relatively high pressure.

Description

technical field [0001] The invention relates to a standard leak hole and a manufacturing method thereof, in particular to a channel-type standard leak hole with controllable size and a manufacturing method thereof. Background technique [0002] The standard leak hole is specially made for vacuum leak detection and calibration work, and can be used under certain conditions (temperature is 296±3K, inlet pressure is 1.01×10 5 Pa, the outlet pressure is lower than 1.33×10 3 Pa) A component that provides a known gas flow rate to the interior of the vacuum system. The standard leak is an indispensable measuring instrument in the field of vacuum science and technology and its application. [0003] According to different principles, standard leaks can be divided into two categories: one is the real leak type, and the other is the virtual leak type. The former has metal flattening type, glass capillary type, glass-platinum wire type, etc., and the latter mainly includes thin film ...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): B81C1/00B81C3/00B82Y40/00
CPCB81C1/00531B81C3/001B82Y40/00
Inventor 王旭迪赵永恒尉伟邱克强朱爱青董栋郑丁杰桑艾霞朱郑乔若
Owner 合肥庐阳科技创新集团有限公司