The standard leakage of the size of the anode bonding technology of silicon and glass
An anodic bonding, standard leakage technology, applied in nanotechnology, microstructure technology, photolithography process of pattern surface, etc., can solve the problem of difficult to ensure the flow state of gas flow in the channel, difficult to achieve, poor controllability of leakage rate, etc. problems, to achieve the effect of small leak rate measurement, good controllability and wide leak rate range
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[0031] In this example, the method for making a size-controllable standard leakage hole by anodic bonding technology of silicon and glass is operated as follows:
[0032] 1. Wipe the surface of the silicon wafer with acetone and bake in an oven at 130°C for 30 minutes. After cooling, put it into an asher for oxygen plasma bombardment treatment. The vacuum degree during oxygen plasma treatment is 6-8Pa, and the bombardment time is 15min. The function of oxygen plasma bombardment is to increase the surface energy of silicon wafers. , Improve the adhesion strength of photoresist on the surface of silicon wafer. So far, the preprocessing of the silicon wafer is completed.
[0033] 2. Spin-coat a layer of AZ-701 photoresist on the surface of the silicon wafer, and the thickness of the photoresist is 180nm. After the silicon wafer was heated on a hot stage at 200°C for 30min, it was subjected to holographic exposure, and the exposure time was 140s. Bake and cure the exposed photo...
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