A kind of back contact crystal silicon cell and preparation method thereof
A technology of crystalline silicon battery and back contact, which is applied in the direction of circuits, photovoltaic power generation, electrical components, etc., can solve the problems of elongated electrode grid line length, decreased battery efficiency, and expanded wafer size, so as to shorten the length, production and investment. Effects of cost reduction and space reduction
Active Publication Date: 2017-09-22
紫石能源有限公司
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Problems solved by technology
[0004] For this reason, the present invention solves the problem of serious drop in cell efficiency due to the expansion of the wafer size and the lengthening of the back electrode grid lines, and simplifies the manufacturing process steps of the cell. The present invention provides a back contact crystal silicon cell and its preparation method
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[0049] In order to make the object, technical solution and advantages of the present invention clearer, the implementation manner of the present invention will be further described in detail below in conjunction with the accompanying drawings.
[0050] The invention provides a back contact silicon cell, such as Figure 3a with Figure 3b As shown, it includes a silicon wafer substrate 1 and an emitter electrode 7, a base electrode 8, an emitter electrode 2 and a base electrode 3 arranged on the back side of the silicon wafer substrate 1, wherein the emitter electrode 2 and the base electrode 3 are respectively connected to the emitter electrode 7 and the base 8 correspondingly form an ohmic contact and the back side of the silicon wafer substrate 1 is divided into a plurality of independent repeating units, where the repeating units are fabricated on the silicon wafer substrate 1 to form independent units, such as figure 1 As shown, each repeating unit 11 is provided with a p...
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The invention discloses a back contact crystal silicon battery and a preparation method thereof. The back contact crystal silicon battery comprises a silicon chip substrate, and an emitter, a base, an emitter electrode and a base electrode which are arranged on the back surface of the silicon chip substrate. The emitter electrode and the base electrode respectively form ohmic contact with the emitter and the base correspondingly, the back surface of the silicon chip substrate is segmented into multiple independent repetition units, and the emitter and the base are distributed in each repetition unit at an interval; and one end of each repetition unit is provided with an emitter busbar in electrical connection with each emitter electrode, the other end of each repetition unit is provided with a base busbar in electrical connection with each base electrode, and adjacent two repetition units realize interconnection through the base busbar and the emitter busbar. The invention also provides a preparation method of the back contact crystal silicon battery. According to the invention, the silicon chip substrate is segmented into the multiple independent repetition units and the interconnection between the repetition units is realized through connection between the busbars, such that the length of the electrodes is shortened, the power loss is reduced, and the battery reliability is improved.
Description
technical field [0001] The invention relates to the technical field of crystalline silicon solar cells, in particular to a back contact crystalline silicon cell and a preparation method thereof. Background technique [0002] The emitter contact electrode and base contact electrode of traditional crystalline silicon cells are made on the front and back of the battery sheet respectively, and the metal grid line of the emitter contact electrode is made on the front side that receives sunlight, so part of the surface of the battery is covered by metal , this part of the area covered by the metal cannot participate in absorbing the incident sunlight, resulting in a part of the optical loss. The application of back contact technology can increase the light-receiving area and increase light absorption, thereby improving cell efficiency. Existing back-contact technologies mainly include metal through-hole back-wound technology (MWT), emitter through-hole back-wound technology (EWT)...
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IPC IPC(8): H01L31/02H01L31/0224H01L31/05H01L31/18
CPCY02E10/50Y02P70/50
Inventor 彭东阳
Owner 紫石能源有限公司