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Process for producing polycrystalline silicon

A polysilicon, polysilicon block technology, applied in chemical instruments and methods, silicon, silicon compounds, etc.

Inactive Publication Date: 2016-07-13
WACKER CHEM GMBH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0017] Despite all measures known in the prior art, a 100% visual inspection for holes and bag damage is always required

Method used

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Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0020] Polycrystalline silicon is preferably deposited on heated thin silicon rods using silicon-containing components and hydrogen as reaction gases (Siemens method). The silicon-containing component is preferably chlorosilane, more preferably trichlorosilane. The deposition is carried out according to the prior art, for example with reference to WO2009 / 047107A2.

[0021] After deposition, the polycrystalline silicon rods are crushed. Preferably, the polycrystalline silicon rods are initially pulverized first. For this pre-shredding, hammers made of low-abrasive materials such as hard metals are used. The pre-shredding takes place on a bench with a surface preferably composed of low-abrasive plastic or silicon.

[0022] The pre-crushed polysilicon is then crushed to a desired target block size of 0, 1, 2, 3 or 4. The block size is defined as the maximum distance (=maximum length) between two points on the surface of the silicon block as follows:

[0023] Block size 0 in ...

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PUM

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Abstract

The invention relates to a process for producing polycrystalline silicon comprising provision of polycrystalline silicon rods, comminution of the polycrystalline silicon rods to give polycrystalline silicon fragments and packing of the polycrystalline silicon fragments by introduction of the polycrystalline silicon fragments into a strong and intrinsically stable container having a base, a wall and an aperture, where the container has the shape of a truncated cone or truncated pyramid with two differently sized areas of base and aperture and with a lateral area, where the area of the base is greater than the area of the aperture of the container, where the thickness of the wall of the container is at least 0.5 mm and where an angle between a slant-height line and a vertical axis of cone or pyramid is at least 2 degrees.

Description

technical field [0001] The present invention relates to a method for producing polysilicon. Background technique [0002] Polycrystalline silicon (polycrystalline silicon, polysilicon) is mainly deposited by the Siemens method from halosilanes, such as trichlorosilane, onto thin rods, giving polycrystalline silicon rods, which are subsequently comminuted into polycrystalline silicon chunks in a very low-polluting process. [0003] For applications in the semiconductor and solar industries, bulk polysilicon with very little contamination is desired. Therefore, materials should preferably be packaged in a low-polluting manner prior to transport to consumers. [0004] In principle, suitable tubular bag-making machines for packaging bulk silicon are commercially available. One such packaging machine is described, for example, in DE3640520A1. [0005] Bulk polysilicon is a sharp-edged, non-free-flowing bulk material (bulk material). Therefore, at the packaging stage, care mus...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): B65D6/02B65D25/10
CPCB65D11/10B65D25/101B65B25/00B65B29/00B65D1/18B65B5/06C01B33/035B65B67/02C01B33/02B02C23/08
Inventor 赖纳·赫尔茨尔维默尔马蒂亚斯·维特兹
Owner WACKER CHEM GMBH