Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Bulk acoustic wave wall shear stress sensor

A shear stress, bulk acoustic wave technology, applied in the direction of instruments, measuring force, measuring devices, etc., can solve the problems of the overall structure and volume of the sensor, difficult to integrate, low integration of friction sensors, etc. The effect of good manufacturability and high sensitivity

Inactive Publication Date: 2016-07-20
INST OF ELECTRONICS ENG CHINA ACAD OF ENG PHYSICS
View PDF5 Cites 13 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, the friction sensor based on the principle of optical measurement has a low integration level, especially the optical detection equipment is difficult to integrate, which makes the overall structure of the sensor large and restricts its application.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Bulk acoustic wave wall shear stress sensor
  • Bulk acoustic wave wall shear stress sensor
  • Bulk acoustic wave wall shear stress sensor

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0042] The present invention is described in detail below in conjunction with accompanying drawing:

[0043] Such as Figure 1(a)-Figure 1(c) As shown, they are schematic diagrams of top view structures of FBARs of different shapes according to the present invention, Figure 1(d) It is a schematic diagram of the top view of the array formed by several FBARs of the same shape in the present invention, Figure 2(a) Shown is the invention corresponding to Figure 1(a) The schematic diagram of the side view structure, image 3 Shown is the bottom view structure schematic diagram of the present invention.

[0044] Such as Figure 2(a) , Figure 6-7 As shown, the bulk acoustic wave wall shear stress sensor includes a substrate 1, a support layer 2, a detection element, a sensitive element, a housing 8, an upper cover 11 and a cavity 12, the substrate 1 is located under the support layer 2, and the detection element is located on the support layer 2, the support layer 2 is used ...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention discloses a bulk acoustic wave wall shear stress sensor comprising a base, a supporting layer, detection elements, sensitive elements, a shell, an upper cover plate and a read-out circuit. The base is arranged below the supporting layer. A cavity structure is formed between the supporting layer, the shell and the upper cover plate. The detection elements arranged in the cavity are installed on the supporting layer. The sensitive elements are installed on the detection elements. The top surface of the sensitive elements is level with the top surface of the upper cover plate, and a gap is reserved between the top surface of the sensitive elements and the opening of the upper cover plate. The read-out circuit is connected with the detection elements through the welding disc of the bottom part of the base. Surface frictional resistance can be converted into stress load of a FBAR so that resonant frequency of the FBAR is changed, and read-out or measurement of the detection signal of the bulk acoustic wave wall shear stress sensor is realized through the read-out circuit. The bulk acoustic wave wall shear stress sensor has the characteristics of being small in size, high in sensitivity, high in integration and conformal with a measured object and can meet the application requirements for frictional resistance sensors in the field of aerospace, weapon engineering and automobiles.

Description

technical field [0001] The invention belongs to the field of microelectromechanical system devices, and in particular relates to a bulk acoustic wave wall shear stress sensor. Background technique [0002] Hypersonic vehicles have a major impact on the country's international strategic structure, increase in military strength, scientific and technological progress, social and economic development, and overall national strength. Research on its related technologies is increasingly becoming a hot spot in the field of aerospace research in various countries around the world. However, there are still many key technologies to be solved in the development of modern hypersonic vehicles, one of which is the accurate measurement of aircraft surface frictional resistance. When the aircraft flies at high speed, the frictional resistance can account for up to 50% of the total resistance of the aircraft, which directly affects the effective range of the aircraft and seriously restricts t...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
IPC IPC(8): G01L1/25
CPCG01L1/255
Inventor 高杨赵俊武雷强王雄邱华诚刘婷婷袁明权张茜梅
Owner INST OF ELECTRONICS ENG CHINA ACAD OF ENG PHYSICS
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com