Resistive random access memory with high reliability and production method thereof
A resistive random access memory technology, applied in static memory, digital memory information, information storage, etc., can solve problems such as damage, and achieve the effect of prolonging service life
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[0026] The following description lists various embodiments of the present invention. The following description introduces the basic concept of the present invention and is not intended to limit the content of the present invention. The actual scope of the invention should be defined according to the claims.
[0027] figure 1 A resistive random access memory 100 implemented according to an embodiment of the present invention is illustrated, including a memory cell array 102 and a control unit 104 . The memory cell array 102 includes a plurality of memory cells, composed of a plurality of wordlines (wordlines) WLn, WLn+1, WLn+2...etc., a plurality of bitlines (bitlines) BLn, BLn+1, BLn+2...etc., and Multiple source lines (sourcelines) SLn, SLn+1, SLn+2... etc. control. Each memory cell includes a resistor and a transistor connected in series, and the gate, drain, and source of the transistor are respectively coupled to the word line, bit line, and source line corresponding to...
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