Semiconductor device, method for manufacturing the same, and display device
A manufacturing method and semiconductor technology, applied in semiconductor/solid-state device manufacturing, semiconductor devices, transistors, etc., can solve problems such as low adhesion, easy deterioration of transistor characteristics, and increased manufacturing costs of semiconductor devices
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Embodiment approach 1
[0111] In this embodiment, refer to Figure 1A to Figure 1C , Figure 2A and Figure 2B , Figure 3A to Figure 3C , Figure 4 , Figure 5A to Figure 5C , Figure 6A to Figure 6C , Figure 7A and Figure 7B , Figure 8A to Figure 8C , Figure 9A to Figure 9C , Figure 10A and Figure 10B , Figure 11A and Figure 11B , Figure 12A and Figure 12B , Figure 13A to Figure 13D , Figure 14A to Figure 14C , Figure 15A to Figure 15C , Figure 16A to Figure 16D , Figure 17A to Figure 17C as well as Figure 18A and Figure 18B A semiconductor device according to one embodiment of the present invention will be described.
example 1
[0113] Figure 1A It is a plan view of a transistor 150 as a semiconductor device according to one embodiment of the present invention. Figure 1B is along Figure 1A The sectional view of the dotted line Y1-Y2 in. Figure 1C is along Figure 1A The sectional view of the dotted line X1-X2 in. Note that in Figure 1A In the figure, for the sake of convenience, part of the constituent elements of the transistor 150 (a gate insulating film and the like) are not shown. Like the transistor 150 , some components may not be shown in a top view of the transistor to be shown later. In addition, the dot-dash line X1-X1 direction may be referred to as a channel length direction, and the dot-dash line Y1-Y2 direction may be referred to as a channel width direction.
[0114] The transistor 150 includes a conductive film 104 used as a gate electrode layer on a substrate 102; an insulating film 106 used as a gate insulating film on the substrate 102 and the conductive film 104; The oxide ...
example 2
[0198] refer to Figure 3A to Figure 3C The transistor 152 as a semiconductor device of one embodiment of the present invention will be described.
[0199] Figure 3A It is a plan view of a transistor 152 as a semiconductor device of one embodiment of the present invention. Figure 3B is along Figure 3A The sectional view of the dotted line Y1-Y2 in. Figure 3C is along Figure 3A The sectional view of the dotted line X1-X2 in.
[0200] The transistor 152 includes a conductive film 104 used as a gate electrode layer on a substrate 102; an insulating film 106 used as a gate insulating film on the substrate 102 and the conductive film 104; the oxide semiconductor film 108; the insulating film 106 and the protective insulating film 109 on the oxide semiconductor film 108; A pair of electrode layers 112a, 112b of the source electrode layer and a drain electrode layer; insulating films 114, 116, 118 on the pair of electrode layers 112a, 112b and the protective insulating fil...
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