A fast finishing method for m2 type single crystal silicon

Abstract

The invention relates to the technical field of monocrystalline silicon stick growth of by adopting a single crystal furnace pulling-method, in particular to a specific-diameter monocrystalline silicon stick ending method and particularly discloses a rapid ending method.By improving single crystal rise pulling speed, temperature correction rate and other ending parameters, the ending process is divided into three processes of 0-3 mm, 3-80 mm, 81-100 mm according to the ending length.The rapid M2-type monocrystalline silicon ending method can make the ending length of M2-type monocrystalline silicon sticks shortened to be 100 mm, the ending time is shortened by 0.5 hours, the raw material usage amount and energy consumption are reduced, the production efficiency and yield are improved and the production costs of M2-type monocrystalline silicon are reduced.

Description

technical field [0001] The invention relates to the technical field of growing single crystal silicon rods by a single crystal furnace pulling method, in particular to a finishing method for single crystal silicon rods with a specific diameter. Background technique [0002] The production process of preparing monocrystalline silicon by pulling method includes the following steps: furnace dismantling - charging - melting material - narrowing neck - shoulder setting - shoulder turning - equal diameter - finishing - shutdown. Among them, finishing is an important process. When the length of the single crystal reaches a certain length, dislocations of the single crystal can be better eliminated through finishing, the yield of single crystal can be improved, and the utilization rate of raw materials can be maximized. In general, the shape of the end section is required to be as long as one diameter of the single crystal and the cross-section is not greater than 30mm, the end time...

AI Technical Summary

Problems solved by technology

[0003] M2-type monocrystalline silicon is a general term for single crystals with a diameter of 204mm. Due to its large diameter, the existing technology has a long finishing length, takes a lot of time to finish, and consumes a large amount of single crystal materials.

The length of the end is long, which is prone to operating errors. The long time consumption makes the production capacity of the single crystal furnace low, consumes a lot of energy, and consumes a large amount of single crystal raw materials, which eventually leads to higher production costs of M2 type single crystal.

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