Film transistor, display substrate and display device

A thin-film transistor and source technology, applied in transistors, electric solid-state devices, semiconductor devices, etc., can solve the problems of increased parasitic capacitance Cgs, unstable parasitic capacitance, and increased space occupied by TFT, etc., to reduce parasitic capacitance The fluctuation of Cgs, reducing the incidence of bad, and reducing the effect of occupying space

Inactive Publication Date: 2016-08-03
BOE TECH GRP CO LTD +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

When increasing the width-to-length ratio of a dual-channel TFT, the W value is generally increased by increasing the a value, but at the same time it will increase the space occupied by the TFT, resulting in a decrease in the aperture ratio.
[0003] from figure 1 It can be seen from the existing double-channel structure shown that since the space occupied by the TFT is relatively large, the parasitic capacitance Cgs bet

Method used

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  • Film transistor, display substrate and display device
  • Film transistor, display substrate and display device
  • Film transistor, display substrate and display device

Examples

Experimental program
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Example Embodiment

[0035] Preferred embodiment one

[0036] Such as figure 2 As shown, the opening direction of the source electrode 1 is parallel to the direction of the data line 2 connected to the source electrode 1. Since the gate line 3 is perpendicular to the data line 2, the opening direction of the source electrode 1 is also perpendicular to The gate line 3 and the drain 4 are half surrounded by the source 1 and a channel 5 is formed between them, that is, figure 2 A TFT structure with a laterally symmetrical channel channel is shown. The channel length is fixed. If roughly calculated, the channel width is roughly 2(2a+b)+c+2d.

Example Embodiment

[0037] Preferred embodiment two

[0038] Such as image 3 As shown, the opening direction of the source electrode 1 is perpendicular to the direction of the data line 2 connected to the source electrode 1. Since the gate line 3 is perpendicular to the data line 2, the opening direction of the source electrode 1 is parallel to the gate electrode 1. Line 3, the drain 4 is half-surrounded by the source 1 and a channel 5 is formed between the two, that is, image 3 It shows a TFT structure with a vertically symmetrical channel, the length of the channel is fixed, if roughly calculated, the width of the channel is roughly 2(2a+b)+c+2d.

[0039] It can be seen that figure 2 or image 3 The channel in the channel is actually a symmetrically arranged single channel structure, but compared to the traditional double channel structure, it mainly makes full use of the double channel connection and port to transmit signals, by extending the width of the channel Increase the channel width to...

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PUM

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Abstract

The invention discloses a film transistor, a display substrate and a display device. The film transistor comprises an active layer, a source electrode and a drain electrode, wherein the drain electrode is half surrounded by the source electrode, the first portion of the drain electrode is at an inner portion of an opening of the source electrode, and the second portion of the drain electrode extends from the inner portion of the opening of the source electrode to an outer portion of the opening of the source electrode. Through the film transistor, parasitic capacitance between a grid electrode and the source electrode can be reduced and stabilized, so adverse phenomena such as splash screen display can be avoided.

Description

technical field [0001] The invention relates to the field of display technology, in particular to a thin film transistor, a display substrate and a display device. Background technique [0002] In TFTLCD (ThinFilmTransistorLiquidCrystalDisplay, thin film field effect transistor liquid crystal display), the charging of the pixel electrode is controlled by turning on and off the TFT. If you want to improve the charging efficiency, you can increase the charging capacity. A very important means is to increase The width-to-length ratio (W / L) of the channel of the TFT. Since the single-channel design occupies too much space and affects the aperture ratio, a double-channel structure is introduced. The ordinary double-channel such as figure 1 As shown, the channel width is roughly calculated as 2(2a+b). When increasing the width-to-length ratio of a dual-channel TFT, the W value is generally increased by increasing the a value, but at the same time, the space occupied by the TFT w...

Claims

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Application Information

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IPC IPC(8): H01L29/786H01L27/12G02F1/1333G02F1/1368
CPCH01L29/78618G02F1/1333G02F1/1368H01L27/1214
Inventor 毛大龙顾可可吴海龙周焱但艺
Owner BOE TECH GRP CO LTD
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