Manufacturing method and structure of fin field-effect transistor (FinFET) device

Abstract

The invention provides a manufacturing method and structure of a fin field-effect transistor (FinFET) device. A fin-shaped strained silicon channel region in an hourglass shape is adopted to replace a fin-shaped strained silicon channel region in a traditional rectangular or square shape, breadth-length ratio of a fin-shaped strained silicon channel is increased, driving current of the FinFET device is remarkably improved, and a manufacturing process is simple.

Description

technical field [0001] The invention relates to the field of semiconductor manufacturing, in particular to a manufacturing method and structure of a FinFET device. Background technique [0002] MOSFET (Metal Oxide Semiconductor Field Effect Transistor) is the main component of most semiconductor devices. When the channel length is less than 100nm, in the traditional MOSFET, the source and drain regions are separated by the semiconductor material of the silicon substrate surrounding the active region. Interaction, the distance between the drain and the source is also shortened, resulting in a short channel effect, so that the control ability of the gate to the channel becomes worse, and it becomes more and more difficult for the gate voltage to pinch off the channel The larger the , the easier it is for the subthrehhold leakage to occur. [0003] Fin field effect transistor (Fin Field effect transistor, FinFET) is a new metal oxide semiconductor field effect transistor, its ...

AI Technical Summary

Problems solved by technology

[0005] As the semiconductor industry advances to the 22nm technology node, the manufactured FinFET devices are required to have smaller size and higher drive current. However, the existing technology of FinFET device manufacturing can no longer meet this requirement

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