Anti-potential induced degradation (PID) silicon nitride antireflection film, preparation method of anti-PID silicon nitride antireflection film and application of anti-PID silicon nitride antireflection film

Abstract

The present invention discloses an anti-PID silicon nitride antireflection film, a preparation method of the anti-PID silicon nitride antireflection film and an application of the anti-PID silicon nitride antireflection film. The silicon nitride antireflection film comprises an inner-layer silicon nitride antireflection film and an outer-layer silicon nitride antireflection film which are deposited on a silicon wafer, wherein the refractive index of the inner-layer silicon nitride antireflection film is 1.8-2.2, and the refractive index of the outer-layer silicon nitride antireflection film is 2.0-2.5. According to the present invention, by designing the structures including the film layer thickness, the refractive index and the crystallization degree of a silicon nitride antireflection layer of a polycrystalline silicon battery, and then optimizing the p-n junction depth and the doped concentration in a battery diffusion process and a later metallization process, the polycrystalline silicon battery matches the optimized silicon nitride antireflection layer, and finally a polycrystalline silicon battery product possessing an anti-PID performance is obtained. The 72 polycrystalline silicon batteries are packaged into an assembly, the dual 85 test is carried out on the assembly, and the power loss is 2.6%, so that the polycrystalline silicon battery product possessing the anti-PID performance accords with the PID test standard made by TUV.

Description

technical field [0001] The invention relates to the technical field of solar cells, in particular to an anti-PID silicon nitride anti-reflection film and a preparation method and application thereof. Background technique [0002] Potential-induced degradation (Potential Induced Degradation, abbreviated as PID) refers to the polarization phenomenon on the surface of the component induced by the reverse high voltage; if a forward voltage relative to the ground is applied to the component, the leakage current will immediately flow from the battery to the ground , the surface of the battery will accumulate negative charges, which will attract positive charges to the surface of the battery to form a recombination center, resulting in attenuation of the output power of the module; if a negative voltage relative to the ground is applied to the module, the leakage current will flow from the ground Flowing to the battery, the battery surface accumulates positive charges, which will n...

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Problems solved by technology

[0010] In view of the above-mentioned deficiencies in the prior art, the object of the present invention is to provide an anti-PID silicon nitride anti-reflection film and its preparation method and application, aiming at solving the problem of weak anti-PID performance of the existing silicon nitride anti-reflection film

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