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Adjustment method for outer shape of ground component

An adjustment method and technology of components, applied in the directions of grinding devices, grinding machine tools, metal processing equipment, etc., can solve the problems of uneven surface of grinding wafers, scratched wafers by grinding wafers, and short service life of grinding components, and achieve the grinding removal rate. Consistent, save grinding cost, improve the effect of grinding uniformity

Active Publication Date: 2016-08-17
SEMICON MFG INT (SHANGHAI) CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0007] In view of the above-mentioned shortcomings of the prior art, the purpose of the present invention is to provide a method for adjusting the shape of the grinding part, which is used to solve the problem of uneven surface of the easily ground wafer due to the unevenness of the adjusted grinding part in the prior art. Grinding wafers creates scratches that create larger defects on the wafer, as well as issues that make grinding components less useful

Method used

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  • Adjustment method for outer shape of ground component
  • Adjustment method for outer shape of ground component
  • Adjustment method for outer shape of ground component

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0058] see image 3 , the invention provides a method for adjusting the shape of a grinding part, the method for adjusting the shape of a grinding part at least includes the following steps:

[0059] 1) Provide a grinding component 21 and a grinding adjustment device 23 for adjusting the shape of the grinding component 21, the grinding adjustment device 23 includes an adjustment disc 232 and a transmission shaft 231 that drives the adjustment disc 232 to swing;

[0060] 2) Place the adjusting disc 232 on the grinding member 21 and swing it. The swing track of the adjusting disc 232 is composed of a plurality of swinging areas; the adjusting disc 232 is in each of the swinging areas. At least one of the swing duration, the swing speed and the applied pressure is different from each other.

[0061] Specifically, the adjustment process can be carried out synchronously with the grinding process, that is, as figure 2 As shown, the grinding head 20 of the wafer to be ground is pl...

Embodiment 2

[0076] read on image 3 , the present invention also provides a method for adjusting the shape of the grinding component. The adjustment method in this embodiment is substantially the same as the adjustment method in Embodiment 1. difference. In this embodiment, the method for adjusting the swing of the disk 232 includes at least the following steps:

[0077] 21) The adjusting disc 232 is under the first pressure and swings in the first swinging zone Z1 at a first swinging speed, and the duration of the adjusting disc 232 swinging in the first swinging zone Z1 is the second a long time;

[0078] 22) Adjust the pressure and swing speed of the adjustment disk 232, so that the adjustment disk 232 swings in the second swing zone Z2 at a second swing speed under the second pressure, and the adjustment circle The time period during which the disc 232 oscillates in the second oscillating zone Z2 is the second time period;

[0079] 23) Adjust the pressure and swing speed of the adju...

Embodiment 3

[0085] Please combine image 3 refer to Figure 5 , the present invention also provides a method for adjusting the shape of the grinding component. The adjustment method in this embodiment is substantially the same as the adjustment method in Embodiment 1. The difference between the two is only in the method for adjusting the specific oscillation of the disc 232. Between steps 23) and 24), it also includes adjusting the pressure and the swing speed of the adjustment disc 232, so that the adjustment disc 232 swings at the fourth swing speed at the fourth pressure under the fourth pressure. The step of oscillating zone Z4, the fourth oscillating zone Z4 is the entire oscillating track of the adjustment disc 232, that is, the fourth oscillating zone Z4 is the first oscillating zone Z1, the second oscillating zone The sum of Z2 and the third swing zone Z3, that is, the starting point of the fourth swing zone Z4 is at a distance of about 1.65 inches from the edge of the grinding m...

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Abstract

The invention provides an adjustment method for the outer shape of a ground component. According to the adjustment method, all areas of the ground component are adjusted under different conditions so that the surface of the ground component can be kept flat all the time, and accordingly the overall grinding uniformity of the ground component is improved; residues of ground by-products in trenches of the ground component are reduced, and the ground chip is prevented from being scratched; the grinding and removal speed of the different areas of the ground component is made to be the same, and the grinding uniformity of the different areas of the ground component is improved; and the service life of the ground component is prolonged, and the grinding cost is reduced.

Description

technical field [0001] The invention relates to the field of semiconductor process manufacturing, in particular to a method for adjusting the shape of a grinding part. Background technique [0002] In the IC manufacturing process, planarization technology has become one of the indispensable key technologies that are equally important and interdependent with photolithography and etching. The chemical mechanical polishing (CMP, Chemical Mechanical Polishing) process is currently the most effective and mature planarization technology. In the semiconductor manufacturing process, surface planarization is an important technology to deal with high-density lithography. In the process of surface planarization, it is very important to control the uniformity of the wafer surface thickness, because only a flat surface without height drop can avoid exposure At the same time, the uniformity of the thickness of the wafer surface will also affect the electrical performance parameters of th...

Claims

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Application Information

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IPC IPC(8): B24B37/10B24B37/005B24B37/34
Inventor 唐强
Owner SEMICON MFG INT (SHANGHAI) CORP
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