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A kind of terbium-germanium-bismuth material, preparation method and application thereof

A raw material, cubic crystal technology, applied in the field of terbium-germanium-bismuth material preparation, can solve the problems of commercial application limitation, weakening magnetocaloric performance, etc., and achieve the effect of low price

Active Publication Date: 2017-11-28
张家港市乐余科创园投资发展有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, due to the low and narrow temperature range (270K-310K) of the above-mentioned magnetic refrigeration materials, the large thermal hysteresis effect significantly weakens the magnetocaloric performance, which limits its commercial application.

Method used

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  • A kind of terbium-germanium-bismuth material, preparation method and application thereof
  • A kind of terbium-germanium-bismuth material, preparation method and application thereof
  • A kind of terbium-germanium-bismuth material, preparation method and application thereof

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Experimental program
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Effect test

Embodiment 1

[0029] This embodiment prepares material Tb 4 Ge 2 Bi and determine its performance.

[0030] 1. Tb 4 Ge 2The preparation of Bi specifically comprises the following steps:

[0031] Step 1: Press Tb 4 Ge 2 Bi chemical formula (that is, atomic ratio) is weighed, and the commercially available rare earth metal Tb, semiconductor Ge, and metal Bi raw materials with a purity higher than 99.9% are mixed, and Bi is added in excess of 5% (atomic percentage);

[0032] Step 2: Put the raw materials configured in step 1 into the electric arc furnace or induction heating furnace to vacuumize, when the vacuum degree reaches 5×10 -2 Pa~1×10 -3 Pa, after cleaning with high-purity argon with a purity of 99.999% for 1 or 2 times, vacuum again to 5×10 - 2 Pa~1×10 -3 Pa, filled with high-purity argon protection, the pressure in the furnace chamber is 1 atmosphere, repeated turning and melting for 3 to 5 times, the melting temperature is between 1200 ° C and 1700 ° C, and the melting tim...

Embodiment 2

[0047] This embodiment prepares material Tb 4 Ge 0.1 Bi 2.9 , and measure its performance.

[0048] 1. Tb 4 Ge 0.1 Bi 2.9 The preparation specifically comprises the following steps:

[0049] Step 1: Press Tb 4 Ge 0.1 Bi 2.9 Chemical formula (that is, atomic ratio) weighing, mixing commercially available Tb, Ge, and Bi raw materials with a purity higher than 99.9%, where Bi is added in excess of 15% (atomic percentage);

[0050] Step 2: Put the raw materials configured in step 1 into the electric arc furnace or induction heating furnace to vacuumize, when the vacuum degree reaches 5×10 -2 Pa~1×10 -3 Pa, after cleaning with high-purity argon with a purity of 99.999% for 1 or 2 times, vacuum again to 5×10 - 2 Pa~1×10 -3 Pa, filled with high-purity argon protection, the pressure in the furnace chamber is 1 atmosphere, repeated turning and melting for 3 to 5 times, the melting temperature is between 1200 ° C and 1700 ° C, and the melting time is 30 seconds;

[0051] S...

Embodiment 3

[0060]This embodiment prepares bride price Tb 4 Ge 2.8 Bi 0.2 and measure its performance.

[0061] 1. Tb 4 Ge 2.8 Bi 0.2 The preparation specifically comprises the following steps:

[0062] Step 1: Press Tb 4 Ge 2.8 Bi 0.2 Chemical formula (that is, atomic ratio) weighing, mixing commercially available Tb, Ge, and Bi raw materials with a purity higher than 99.9%, and adding 1% (atomic percentage) of Bi in excess;

[0063] Step 2: Put the raw materials configured in step 1 into the electric arc furnace or induction heating furnace to vacuumize, when the vacuum degree reaches 5×10 -2 Pa~1×10 -3 Pa, after cleaning with high-purity argon with a purity of 99.999% for 1 or 2 times, vacuum again to 5×10 - 2 Pa~1×10 -3 Pa, filled with high-purity argon protection, the pressure in the furnace chamber is 1 atmosphere, repeated turning and melting 3 to 5 times, the melting temperature is between 1200 ° C and 1700 ° C, and the melting time is 80 seconds;

[0064] Step 3: Co...

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Abstract

The invention discloses a terbium-germanium-bismuth material and a preparation method and application thereof. The chemical formula of the terbium-germanium-bismuth material is Tb4Ge3-xBix, wherein x is the content of Bi, and 0.2<=x<=2.9. The material is of an inverted-Th3P4 type cubic crystal structure, and the space group is I-43d. According to the terbium-germanium-bismuth material, the magnetic entropy change is large within the temperature range of 235-350K, the magnetic refrigeration capacity is high, the thermal-magnetism reversibility is good, the cost is low, and the terbium-germanium-bismuth material is an ideal room temperature zone magnetic refrigeration material.

Description

technical field [0001] The invention relates to a magnetic material, in particular to a terbium-germanium-bismuth material, a preparation method and an application thereof. Background technique [0002] Traditional gas compression refrigeration technology has been widely used in various industries, but it has disadvantages such as low refrigeration efficiency, high energy consumption, and damage to the atmospheric environment. Magnetic refrigeration technology refers to a new type of refrigeration technology that uses magnetic materials as refrigerants. Compared with the traditional gas compression refrigeration technology, it has significant advantages such as high efficiency and energy saving, green environmental protection, stability and reliability, and is known as a high-tech green refrigeration technology. Its refrigeration principle is based on the magnetocaloric effect of magnetic refrigeration materials, that is, under isothermal conditions, When the magnetic field...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C22C1/02C22F1/02C22C28/00C09K5/14
CPCC09K5/14C22C1/02C22C28/00C22F1/02
Inventor 姚金雷颜长沈娇艳
Owner 张家港市乐余科创园投资发展有限公司
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